Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device

Norman Boettcher, Taro Takamori, Keiji Wada, Wataru Saito, Shinichi Nishizawa, Tobias Erlbacher

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents the switching performance of a novel solid-state circuit breaker device suitable for DC-applications up to 800 V. These "dual thyristor"devices are manufactured employing a 4H-SiC JFET technology. With respect to scalability, the influence of specific design parameters on the quasi-static output characteristics are discussed along with corresponding fabrication aspects. In order to investigate the switching performance, clamped and unclamped inductive switching (CIS and UIS) experiments at up to 800 V are carried out. In case of CIS, current clearance is achieved within 642 ns after the self-sensed trigger event at 1.75 A. The UIS experiments reveal stable current handling capability during avalanche.

Original languageEnglish
Title of host publication2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages261-264
Number of pages4
ISBN (Electronic)9781665422017
DOIs
Publication statusPublished - 2022
Event34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada
Duration: May 22 2022May 25 2022

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2022-May
ISSN (Print)1063-6854

Conference

Conference34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Country/TerritoryCanada
CityVancouver
Period5/22/225/25/22

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device'. Together they form a unique fingerprint.

Cite this