Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Yasunori Tanaka; Shin Ichi Nishizawa; Kenji Fukuda; Kazuo Arai; Toshiyuki Ohno; Naoki Oyanagi; Takaya Suzuki; Tsutomu Yatsuo

doi:10.1063/1.1591062

Fabrication of 1.4-kV mesa-type p⁺-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Yasunori Tanaka, Shin Ichi Nishizawa, Kenji Fukuda, Kazuo Arai, Toshiyuki Ohno, Naoki Oyanagi, Takaya Suzuki, Tsutomu Yatsuo

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A 1.4-kV mesa-type 6H-SiC p⁺-n diode with an ideal avalanche breakdown and without forward degradation was fabricated. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. The 1.4-kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness and doping concentration of the drift layer was obtained.

Original language	English
Pages (from-to)	377-379
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	2
DOIs	https://doi.org/10.1063/1.1591062
Publication status	Published - Jul 14 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1591062

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@article{6ebf8d9ac1b44908a32e3f139228e7a8,

title = "Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate",

abstract = "A 1.4-kV mesa-type 6H-SiC p+-n diode with an ideal avalanche breakdown and without forward degradation was fabricated. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. The 1.4-kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness and doping concentration of the drift layer was obtained.",

author = "Yasunori Tanaka and Nishizawa, {Shin Ichi} and Kenji Fukuda and Kazuo Arai and Toshiyuki Ohno and Naoki Oyanagi and Takaya Suzuki and Tsutomu Yatsuo",

year = "2003",

month = jul,

day = "14",

doi = "10.1063/1.1591062",

language = "English",

volume = "83",

pages = "377--379",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

AU - Tanaka, Yasunori

AU - Nishizawa, Shin Ichi

AU - Fukuda, Kenji

AU - Arai, Kazuo

AU - Ohno, Toshiyuki

AU - Oyanagi, Naoki

AU - Suzuki, Takaya

AU - Yatsuo, Tsutomu

PY - 2003/7/14

Y1 - 2003/7/14

N2 - A 1.4-kV mesa-type 6H-SiC p+-n diode with an ideal avalanche breakdown and without forward degradation was fabricated. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. The 1.4-kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness and doping concentration of the drift layer was obtained.

AB - A 1.4-kV mesa-type 6H-SiC p+-n diode with an ideal avalanche breakdown and without forward degradation was fabricated. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. The 1.4-kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness and doping concentration of the drift layer was obtained.

UR - http://www.scopus.com/inward/record.url?scp=0042266734&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042266734&partnerID=8YFLogxK

U2 - 10.1063/1.1591062

DO - 10.1063/1.1591062

M3 - Article

AN - SCOPUS:0042266734

SN - 0003-6951

VL - 83

SP - 377

EP - 379

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Fabrication of 1.4-kV mesa-type p⁺-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Abstract

All Science Journal Classification (ASJC) codes

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