A 1.4-kV mesa-type 6H-SiC p+-n diode with an ideal avalanche breakdown and without forward degradation was fabricated. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. The 1.4-kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness and doping concentration of the drift layer was obtained.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - Jul 14 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)