Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Yasunori Tanaka, Shin Ichi Nishizawa, Kenji Fukuda, Kazuo Arai, Toshiyuki Ohno, Naoki Oyanagi, Takaya Suzuki, Tsutomu Yatsuo

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A 1.4-kV mesa-type 6H-SiC p+-n diode with an ideal avalanche breakdown and without forward degradation was fabricated. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. The 1.4-kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness and doping concentration of the drift layer was obtained.

Original languageEnglish
Pages (from-to)377-379
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number2
DOIs
Publication statusPublished - Jul 14 2003

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mesas
electrical faults
avalanches
breakdown
diodes
degradation
fabrication
defects
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate. / Tanaka, Yasunori; Nishizawa, Shin Ichi; Fukuda, Kenji; Arai, Kazuo; Ohno, Toshiyuki; Oyanagi, Naoki; Suzuki, Takaya; Yatsuo, Tsutomu.

In: Applied Physics Letters, Vol. 83, No. 2, 14.07.2003, p. 377-379.

Research output: Contribution to journalArticle

Tanaka, Yasunori ; Nishizawa, Shin Ichi ; Fukuda, Kenji ; Arai, Kazuo ; Ohno, Toshiyuki ; Oyanagi, Naoki ; Suzuki, Takaya ; Yatsuo, Tsutomu. / Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate. In: Applied Physics Letters. 2003 ; Vol. 83, No. 2. pp. 377-379.
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