Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Yasunori Tanaka, Shin Ichi Nishizawa, Kenji Fukuda, Kazuo Arai, Toshiyuki Ohno, Naoki Oyanagi, Takaya Suzuki, Tsutomu Yatsuo

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Abstract

A 1.4-kV mesa-type 6H-SiC p+-n diode with an ideal avalanche breakdown and without forward degradation was fabricated. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. The 1.4-kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness and doping concentration of the drift layer was obtained.

Original languageEnglish
Pages (from-to)377-379
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number2
DOIs
Publication statusPublished - Jul 14 2003
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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