Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties

C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, Shinichi Nishizawa, H. Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga's Figure of Merit (BFOM) has been obtained.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
Pages1175-1178
Number of pages4
Volume527-529
EditionPART 2
Publication statusPublished - 2006
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Schottky barrier diodes
Schottky diodes
Electric breakdown
electrical faults
floating
Electric properties
electrical properties
Fabrication
fabrication
spacing
figure of merit
micrometers

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ota, C., Nishio, J., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S., & Ohashi, H. (2006). Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., Vol. 527-529, pp. 1175-1178). (Materials Science Forum; Vol. 527-529, No. PART 2).

Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. / Ota, C.; Nishio, J.; Hatakeyama, T.; Shinohe, T.; Kojima, K.; Nishizawa, Shinichi; Ohashi, H.

Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. Vol. 527-529 PART 2. ed. 2006. p. 1175-1178 (Materials Science Forum; Vol. 527-529, No. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ota, C, Nishio, J, Hatakeyama, T, Shinohe, T, Kojima, K, Nishizawa, S & Ohashi, H 2006, Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. in Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 edn, vol. 527-529, Materials Science Forum, no. PART 2, vol. 527-529, pp. 1175-1178, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.
Ota C, Nishio J, Hatakeyama T, Shinohe T, Kojima K, Nishizawa S et al. Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Vol. 527-529. 2006. p. 1175-1178. (Materials Science Forum; PART 2).
Ota, C. ; Nishio, J. ; Hatakeyama, T. ; Shinohe, T. ; Kojima, K. ; Nishizawa, Shinichi ; Ohashi, H. / Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. Vol. 527-529 PART 2. ed. 2006. pp. 1175-1178 (Materials Science Forum; PART 2).
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AU - Kojima, K.

AU - Nishizawa, Shinichi

AU - Ohashi, H.

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