Abstract
4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga's Figure of Merit (BFOM) has been obtained.
| Original language | English |
|---|---|
| Title of host publication | Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 |
| Pages | 1175-1178 |
| Number of pages | 4 |
| Volume | 527-529 |
| Edition | PART 2 |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States Duration: Sep 18 2005 → Sep 23 2005 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Number | PART 2 |
| Volume | 527-529 |
| ISSN (Print) | 02555476 |
Other
| Other | International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) |
|---|---|
| Country | United States |
| City | Pittsburgh, PA |
| Period | 9/18/05 → 9/23/05 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. / Ota, C.; Nishio, J.; Hatakeyama, T.; Shinohe, T.; Kojima, K.; Nishizawa, Shinichi; Ohashi, H.
Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. Vol. 527-529 PART 2. ed. 2006. p. 1175-1178 (Materials Science Forum; Vol. 527-529, No. PART 2).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties
AU - Ota, C.
AU - Nishio, J.
AU - Hatakeyama, T.
AU - Shinohe, T.
AU - Kojima, K.
AU - Nishizawa, Shinichi
AU - Ohashi, H.
PY - 2006
Y1 - 2006
N2 - 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga's Figure of Merit (BFOM) has been obtained.
AB - 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga's Figure of Merit (BFOM) has been obtained.
UR - http://www.scopus.com/inward/record.url?scp=37849006796&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=37849006796&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:37849006796
SN - 9780878494255
VL - 527-529
T3 - Materials Science Forum
SP - 1175
EP - 1178
BT - Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
ER -