Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties

C. Ota; J. Nishio; T. Hatakeyama; T. Shinohe; K. Kojima; Shinichi Nishizawa; H. Ohashi

Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties

C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, Shinichi Nishizawa, H. Ohashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga's Figure of Merit (BFOM) has been obtained.

Original language	English
Title of host publication	Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
Pages	1175-1178
Number of pages	4
Volume	527-529
Edition	PART 2
Publication status	Published - 2006
Externally published	Yes
Event	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States Duration: Sep 18 2005 → Sep 23 2005

Publication series

Name	Materials Science Forum
Number	PART 2
Volume	527-529
ISSN (Print)	02555476

Other

Other	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country	United States
City	Pittsburgh, PA
Period	9/18/05 → 9/23/05

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Ota, C., Nishio, J., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S., & Ohashi, H. (2006). Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., Vol. 527-529, pp. 1175-1178). (Materials Science Forum; Vol. 527-529, No. PART 2).

Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. / Ota, C.; Nishio, J.; Hatakeyama, T.; Shinohe, T.; Kojima, K.; Nishizawa, Shinichi; Ohashi, H.

Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. Vol. 527-529 PART 2. ed. 2006. p. 1175-1178 (Materials Science Forum; Vol. 527-529, No. PART 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ota, C, Nishio, J, Hatakeyama, T, Shinohe, T, Kojima, K, Nishizawa, S & Ohashi, H 2006, Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. in Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 edn, vol. 527-529, Materials Science Forum, no. PART 2, vol. 527-529, pp. 1175-1178, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.

Ota C, Nishio J, Hatakeyama T, Shinohe T, Kojima K, Nishizawa S et al. Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Vol. 527-529. 2006. p. 1175-1178. (Materials Science Forum; PART 2).

Ota, C. ; Nishio, J. ; Hatakeyama, T. ; Shinohe, T. ; Kojima, K. ; Nishizawa, Shinichi ; Ohashi, H. / Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties. Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. Vol. 527-529 PART 2. ed. 2006. pp. 1175-1178 (Materials Science Forum; PART 2).

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abstract = "4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga's Figure of Merit (BFOM) has been obtained.",

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AU - Shinohe, T.

AU - Kojima, K.

AU - Nishizawa, Shinichi

AU - Ohashi, H.

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AB - 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga's Figure of Merit (BFOM) has been obtained.

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