TY - GEN
T1 - Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties
AU - Ota, C.
AU - Nishio, J.
AU - Hatakeyama, T.
AU - Shinohe, T.
AU - Kojima, K.
AU - Nishizawa, Shinichi
AU - Ohashi, H.
PY - 2006
Y1 - 2006
N2 - 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga's Figure of Merit (BFOM) has been obtained.
AB - 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga's Figure of Merit (BFOM) has been obtained.
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M3 - Conference contribution
AN - SCOPUS:37849006796
SN - 9780878494255
VL - 527-529
T3 - Materials Science Forum
SP - 1175
EP - 1178
BT - Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
T2 - International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Y2 - 18 September 2005 through 23 September 2005
ER -