Fabrication of 4H-SiC/nanocrystalline diamond pn junctions

Ryo Amano, Masaki Goto, Yoshimine Kato, Kungen Tsutsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nitrogen-incorporated, n-type nanocrystalline diamond (NCD) films are deposited on p-type Si(001) and 4H-SiC(0001) substrates by moderate-pressure, microwave plasma-enhanced chemical vapor deposition using a mixture of 1%CH 4-30%N 2-69%Ar. X-ray diffraction and visible Raman spectroscopy reveal that the structure of the NCD films is identical independent of the substrate materials, such that diamond nanoparticles with apparent crystal sizes of 5-8 nm are embedded in amorphous sp 2 carbon matrix. For p-Si/n-NCD heterojunctions in a diode configuration, the rectifying behavior in current-voltage curves depends upon the substrate temperature for film deposition, and the rectification ratio reaches a maximum of about 300 when the film is deposited at 830 °C. For p-4H-SiC/n-NCD heterojunctions, the rectification ratio increases greatly to about 10000 when the film is deposited at 830 °C due exclusively to suppression of the reverse leakage current.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages1009-1012
Number of pages4
DOIs
Publication statusPublished - May 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Amano, R., Goto, M., Kato, Y., & Tsutsui, K. (2012). Fabrication of 4H-SiC/nanocrystalline diamond pn junctions. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 1009-1012). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.1009