Fabrication of 4H-SiC/nanocrystalline diamond pn junctions

Ryo Amano, Masaki Goto, Yoshimine Kato, Kungen Tsutsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nitrogen-incorporated, n-type nanocrystalline diamond (NCD) films are deposited on p-type Si(001) and 4H-SiC(0001) substrates by moderate-pressure, microwave plasma-enhanced chemical vapor deposition using a mixture of 1%CH 4-30%N 2-69%Ar. X-ray diffraction and visible Raman spectroscopy reveal that the structure of the NCD films is identical independent of the substrate materials, such that diamond nanoparticles with apparent crystal sizes of 5-8 nm are embedded in amorphous sp 2 carbon matrix. For p-Si/n-NCD heterojunctions in a diode configuration, the rectifying behavior in current-voltage curves depends upon the substrate temperature for film deposition, and the rectification ratio reaches a maximum of about 300 when the film is deposited at 830 °C. For p-4H-SiC/n-NCD heterojunctions, the rectification ratio increases greatly to about 10000 when the film is deposited at 830 °C due exclusively to suppression of the reverse leakage current.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages1009-1012
Number of pages4
DOIs
Publication statusPublished - May 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

Fingerprint

Diamond
Diamonds
diamonds
Diamond films
rectification
diamond films
Fabrication
fabrication
Heterojunctions
heterojunctions
Substrates
Plasma enhanced chemical vapor deposition
Leakage currents
Raman spectroscopy
Diodes
leakage
Nitrogen
Carbon
diodes
Microwaves

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Amano, R., Goto, M., Kato, Y., & Tsutsui, K. (2012). Fabrication of 4H-SiC/nanocrystalline diamond pn junctions. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 1009-1012). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.1009

Fabrication of 4H-SiC/nanocrystalline diamond pn junctions. / Amano, Ryo; Goto, Masaki; Kato, Yoshimine; Tsutsui, Kungen.

Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 1009-1012 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Amano, R, Goto, M, Kato, Y & Tsutsui, K 2012, Fabrication of 4H-SiC/nanocrystalline diamond pn junctions. in Silicon Carbide and Related Materials 2011, ICSCRM 2011. Materials Science Forum, vol. 717-720, pp. 1009-1012, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 9/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.1009
Amano R, Goto M, Kato Y, Tsutsui K. Fabrication of 4H-SiC/nanocrystalline diamond pn junctions. In Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 1009-1012. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.1009
Amano, Ryo ; Goto, Masaki ; Kato, Yoshimine ; Tsutsui, Kungen. / Fabrication of 4H-SiC/nanocrystalline diamond pn junctions. Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. pp. 1009-1012 (Materials Science Forum).
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