TY - GEN
T1 - Fabrication of a-C semiconductor nanoparticles for quantum dots surface emitting laser using high-density plasma in localized area
AU - Kobayashi, Ryutaro
AU - Nagata, Yoshiya
AU - Okafuji, Keigo
AU - Ohtomo, Shinpei
AU - Naragino, Hiroshi
AU - Honda, Kensuke
N1 - Publisher Copyright:
© 2016 The Electrochemical Society.
PY - 2016
Y1 - 2016
N2 - Novel synthesis method to fabricate Si-added amorphous carbon (a-C) nano-particles could be established using the radio-frequency plasma-enhanced vapor deposition (r.f.-PeCVD) system (13.56 MHz, SAMCO Co., Ltd, BPD-1) with porous aluminum plate loaded between the cathode and the anode. The mechanism of nano particles formation was clarified by verifying the relation between the shape of particles and the condition of r.f.-PeCVD such as r.f. power, chamber pressure and plate thickness. Si-added a-C nano-particles with minimum diameter of 14.8 nm could be fabricated with r.f. power of 50 W, chamber pressure of 60 Pa and plate thickness of 0.7 mm. These nano particles showed photon-to-current conversion functionality under 360 nm irradiation, and can be applied for photo electronic device in nano-meter size. sp2 impurities that causes the degradation of semiconductor properties could be reduced by the decrease of r.f. power and the increase of flow rate of H2 gas during CVD synthesis. Semiconductor properties such as carrier mobilities of Si-added a-C nano-particle were able to be improved up to those of practically-used semiconductor in photo electronic devices.
AB - Novel synthesis method to fabricate Si-added amorphous carbon (a-C) nano-particles could be established using the radio-frequency plasma-enhanced vapor deposition (r.f.-PeCVD) system (13.56 MHz, SAMCO Co., Ltd, BPD-1) with porous aluminum plate loaded between the cathode and the anode. The mechanism of nano particles formation was clarified by verifying the relation between the shape of particles and the condition of r.f.-PeCVD such as r.f. power, chamber pressure and plate thickness. Si-added a-C nano-particles with minimum diameter of 14.8 nm could be fabricated with r.f. power of 50 W, chamber pressure of 60 Pa and plate thickness of 0.7 mm. These nano particles showed photon-to-current conversion functionality under 360 nm irradiation, and can be applied for photo electronic device in nano-meter size. sp2 impurities that causes the degradation of semiconductor properties could be reduced by the decrease of r.f. power and the increase of flow rate of H2 gas during CVD synthesis. Semiconductor properties such as carrier mobilities of Si-added a-C nano-particle were able to be improved up to those of practically-used semiconductor in photo electronic devices.
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U2 - 10.1149/07513.0139ecst
DO - 10.1149/07513.0139ecst
M3 - Conference contribution
AN - SCOPUS:84991491999
T3 - ECS Transactions
SP - 139
EP - 152
BT - Emerging Nanomaterials and Devices
A2 - Schwalke, U.
A2 - Baumgart, H.
A2 - Hahn, H.
A2 - Kreupl, F.
A2 - Lemme, M. C.
A2 - Li, Q.
A2 - Orlowski, M. K.
A2 - Rotkin, S. V.
PB - Electrochemical Society Inc.
T2 - Symposium on Emerging Nanomaterials and Devices - PRiME 2016/230th ECS Meeting
Y2 - 2 October 2016 through 7 October 2016
ER -