Fabrication of a-C semiconductor nanoparticles for quantum dots surface emitting laser using high-density plasma in localized area

Ryutaro Kobayashi, Yoshiya Nagata, Keigo Okafuji, Shinpei Ohtomo, Hiroshi Naragino, Kensuke Honda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Novel synthesis method to fabricate Si-added amorphous carbon (a-C) nano-particles could be established using the radio-frequency plasma-enhanced vapor deposition (r.f.-PeCVD) system (13.56 MHz, SAMCO Co., Ltd, BPD-1) with porous aluminum plate loaded between the cathode and the anode. The mechanism of nano particles formation was clarified by verifying the relation between the shape of particles and the condition of r.f.-PeCVD such as r.f. power, chamber pressure and plate thickness. Si-added a-C nano-particles with minimum diameter of 14.8 nm could be fabricated with r.f. power of 50 W, chamber pressure of 60 Pa and plate thickness of 0.7 mm. These nano particles showed photon-to-current conversion functionality under 360 nm irradiation, and can be applied for photo electronic device in nano-meter size. sp2 impurities that causes the degradation of semiconductor properties could be reduced by the decrease of r.f. power and the increase of flow rate of H2 gas during CVD synthesis. Semiconductor properties such as carrier mobilities of Si-added a-C nano-particle were able to be improved up to those of practically-used semiconductor in photo electronic devices.

Original languageEnglish
Title of host publicationEmerging Nanomaterials and Devices
EditorsH. Baumgart, H. Hahn, M. K. Orlowski, U. Schwalke, S. V. Rotkin, F. Kreupl, M. C. Lemme, Q. Li
PublisherElectrochemical Society Inc.
Pages139-152
Number of pages14
Edition13
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
Externally publishedYes
EventSymposium on Emerging Nanomaterials and Devices - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Publication series

NameECS Transactions
Number13
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Emerging Nanomaterials and Devices - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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