Fabrication of a flexible bismuth telluride power generation module using microporous polyimide films as substrates

Kunihisa Kato, Yoshika Hatasako, Makoto Kashiwagi, Harutoshi Hagino, Chihaya Adachi, Koji Miyazaki

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this study, we investigated the effect of the structure of microporous p-type (Bi0.4Te3Sb1.6) and n-type (Bi 2.0Te2.7Se0.3) BiTe-based thin films on their thermoelectric performance. High-aspect-ratio porous thin films with pore depth greater than 1 μm and pore diameter ranging from 300 nm to 500 nm were prepared by oxygen plasma etching of polyimide (PI) layers capped with a heat-resistant block copolymer, which acted as the template. The cross-plane thermal conductivities of the porous p- and n-type thin films were 0.4 W m -1 K-1 and 0.42 W m-1 K-1, respectively, and the dimensionless figures of merit, ZT, of the p- and n-type BiTe films were estimated as 1.0 and 1.0, respectively, at room temperature. A prototype thermoelectric module consisting of 20 pairs of p- and n-type strips over an area of 3 cm × 5 cm was fabricated on the porous PI substrate. This module produced an output power of 0.1 mW and an output voltage of 0.6 V for a temperature difference of 130°C. The output power of the submicrostructured module was 1.5 times greater than that of a module based on smooth BiTe-based thin films. Thus, the thermoelectric performance of the thin films was improved owing to their submicroscale structure.

Original languageEnglish
Pages (from-to)1733-1739
Number of pages7
JournalJournal of Electronic Materials
Volume43
Issue number6
DOIs
Publication statusPublished - 2014

Fingerprint

bismuth tellurides
Bismuth
polyimides
Polyimides
Power generation
modules
Fabrication
Thin films
fabrication
Substrates
thin films
output
porosity
Plasma etching
oxygen plasma
plasma etching
high aspect ratio
block copolymers
figure of merit
Block copolymers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Fabrication of a flexible bismuth telluride power generation module using microporous polyimide films as substrates. / Kato, Kunihisa; Hatasako, Yoshika; Kashiwagi, Makoto; Hagino, Harutoshi; Adachi, Chihaya; Miyazaki, Koji.

In: Journal of Electronic Materials, Vol. 43, No. 6, 2014, p. 1733-1739.

Research output: Contribution to journalArticle

Kato, Kunihisa ; Hatasako, Yoshika ; Kashiwagi, Makoto ; Hagino, Harutoshi ; Adachi, Chihaya ; Miyazaki, Koji. / Fabrication of a flexible bismuth telluride power generation module using microporous polyimide films as substrates. In: Journal of Electronic Materials. 2014 ; Vol. 43, No. 6. pp. 1733-1739.
@article{8fc0063984f34f2689f5807c65103335,
title = "Fabrication of a flexible bismuth telluride power generation module using microporous polyimide films as substrates",
abstract = "In this study, we investigated the effect of the structure of microporous p-type (Bi0.4Te3Sb1.6) and n-type (Bi 2.0Te2.7Se0.3) BiTe-based thin films on their thermoelectric performance. High-aspect-ratio porous thin films with pore depth greater than 1 μm and pore diameter ranging from 300 nm to 500 nm were prepared by oxygen plasma etching of polyimide (PI) layers capped with a heat-resistant block copolymer, which acted as the template. The cross-plane thermal conductivities of the porous p- and n-type thin films were 0.4 W m -1 K-1 and 0.42 W m-1 K-1, respectively, and the dimensionless figures of merit, ZT, of the p- and n-type BiTe films were estimated as 1.0 and 1.0, respectively, at room temperature. A prototype thermoelectric module consisting of 20 pairs of p- and n-type strips over an area of 3 cm × 5 cm was fabricated on the porous PI substrate. This module produced an output power of 0.1 mW and an output voltage of 0.6 V for a temperature difference of 130°C. The output power of the submicrostructured module was 1.5 times greater than that of a module based on smooth BiTe-based thin films. Thus, the thermoelectric performance of the thin films was improved owing to their submicroscale structure.",
author = "Kunihisa Kato and Yoshika Hatasako and Makoto Kashiwagi and Harutoshi Hagino and Chihaya Adachi and Koji Miyazaki",
year = "2014",
doi = "10.1007/s11664-013-2852-0",
language = "English",
volume = "43",
pages = "1733--1739",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

TY - JOUR

T1 - Fabrication of a flexible bismuth telluride power generation module using microporous polyimide films as substrates

AU - Kato, Kunihisa

AU - Hatasako, Yoshika

AU - Kashiwagi, Makoto

AU - Hagino, Harutoshi

AU - Adachi, Chihaya

AU - Miyazaki, Koji

PY - 2014

Y1 - 2014

N2 - In this study, we investigated the effect of the structure of microporous p-type (Bi0.4Te3Sb1.6) and n-type (Bi 2.0Te2.7Se0.3) BiTe-based thin films on their thermoelectric performance. High-aspect-ratio porous thin films with pore depth greater than 1 μm and pore diameter ranging from 300 nm to 500 nm were prepared by oxygen plasma etching of polyimide (PI) layers capped with a heat-resistant block copolymer, which acted as the template. The cross-plane thermal conductivities of the porous p- and n-type thin films were 0.4 W m -1 K-1 and 0.42 W m-1 K-1, respectively, and the dimensionless figures of merit, ZT, of the p- and n-type BiTe films were estimated as 1.0 and 1.0, respectively, at room temperature. A prototype thermoelectric module consisting of 20 pairs of p- and n-type strips over an area of 3 cm × 5 cm was fabricated on the porous PI substrate. This module produced an output power of 0.1 mW and an output voltage of 0.6 V for a temperature difference of 130°C. The output power of the submicrostructured module was 1.5 times greater than that of a module based on smooth BiTe-based thin films. Thus, the thermoelectric performance of the thin films was improved owing to their submicroscale structure.

AB - In this study, we investigated the effect of the structure of microporous p-type (Bi0.4Te3Sb1.6) and n-type (Bi 2.0Te2.7Se0.3) BiTe-based thin films on their thermoelectric performance. High-aspect-ratio porous thin films with pore depth greater than 1 μm and pore diameter ranging from 300 nm to 500 nm were prepared by oxygen plasma etching of polyimide (PI) layers capped with a heat-resistant block copolymer, which acted as the template. The cross-plane thermal conductivities of the porous p- and n-type thin films were 0.4 W m -1 K-1 and 0.42 W m-1 K-1, respectively, and the dimensionless figures of merit, ZT, of the p- and n-type BiTe films were estimated as 1.0 and 1.0, respectively, at room temperature. A prototype thermoelectric module consisting of 20 pairs of p- and n-type strips over an area of 3 cm × 5 cm was fabricated on the porous PI substrate. This module produced an output power of 0.1 mW and an output voltage of 0.6 V for a temperature difference of 130°C. The output power of the submicrostructured module was 1.5 times greater than that of a module based on smooth BiTe-based thin films. Thus, the thermoelectric performance of the thin films was improved owing to their submicroscale structure.

UR - http://www.scopus.com/inward/record.url?scp=84901911108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901911108&partnerID=8YFLogxK

U2 - 10.1007/s11664-013-2852-0

DO - 10.1007/s11664-013-2852-0

M3 - Article

AN - SCOPUS:84901911108

VL - 43

SP - 1733

EP - 1739

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -