Abstract
We proposed the inkjet embedding method for fabrication of a gated cold cathode. Using the method, we demonstrated the field electron emission from the gated cold cathode. Surface treatment, droplet drying, and separation between the gate and carbon black are the key steps to successful fabrication of the gated FEA. This proposed method is expected to facilitate the development of a large area FED with low cost and low temperature processing. Low temperature processing characteristic has a potential application to FEDs on a plastic substrate for a flexible display.
| Original language | English |
|---|---|
| Title of host publication | Digest of Papers - Microprocesses and Nanotechnology 2005 |
| Subtitle of host publication | 2005 International Microprocesses and Nanotechnology Conference |
| Pages | 278-279 |
| Number of pages | 2 |
| Publication status | Published - Dec 1 2005 |
| Event | 2005 International Microprocesses and Nanotechnology Conference - Tokyo, Japan Duration: Oct 25 2005 → Oct 28 2005 |
Publication series
| Name | Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference |
|---|---|
| Volume | 2005 |
Other
| Other | 2005 International Microprocesses and Nanotechnology Conference |
|---|---|
| Country | Japan |
| City | Tokyo |
| Period | 10/25/05 → 10/28/05 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Fabrication of a gated cold cathode by using the inkjet embedding method. / Baba, Akiyoshi; Asano, Tanemasa.
Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference. 2005. p. 278-279 1595322 (Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference; Vol. 2005).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Fabrication of a gated cold cathode by using the inkjet embedding method
AU - Baba, Akiyoshi
AU - Asano, Tanemasa
PY - 2005/12/1
Y1 - 2005/12/1
N2 - We proposed the inkjet embedding method for fabrication of a gated cold cathode. Using the method, we demonstrated the field electron emission from the gated cold cathode. Surface treatment, droplet drying, and separation between the gate and carbon black are the key steps to successful fabrication of the gated FEA. This proposed method is expected to facilitate the development of a large area FED with low cost and low temperature processing. Low temperature processing characteristic has a potential application to FEDs on a plastic substrate for a flexible display.
AB - We proposed the inkjet embedding method for fabrication of a gated cold cathode. Using the method, we demonstrated the field electron emission from the gated cold cathode. Surface treatment, droplet drying, and separation between the gate and carbon black are the key steps to successful fabrication of the gated FEA. This proposed method is expected to facilitate the development of a large area FED with low cost and low temperature processing. Low temperature processing characteristic has a potential application to FEDs on a plastic substrate for a flexible display.
UR - http://www.scopus.com/inward/record.url?scp=33847242649&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847242649&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33847242649
SN - 4990247221
SN - 9784990247225
T3 - Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
SP - 278
EP - 279
BT - Digest of Papers - Microprocesses and Nanotechnology 2005
ER -