Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film

Xiaoyang Cheng, Jianxun Hong, Andrew Mark Spring, Shiyoshi Yokoyama

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

High-quality silicon nitride (Si3N4) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si3N4 film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 104 are achieved. The LSCVD deposited Si3N4 istherefore a highly promising photonic integration platform for various integrated photonicapplications.

Original languageEnglish
Pages (from-to)2182-2187
Number of pages6
JournalOptical Materials Express
Volume7
Issue number7
DOIs
Publication statusPublished - Jun 2 2017

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Photonics
Resonators
Chemical vapor deposition
Fabrication
Optical losses
Bragg gratings
Liquids
Silicon nitride
Refractive index
Waveguides
Temperature
Testing
silicon nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film. / Cheng, Xiaoyang; Hong, Jianxun; Spring, Andrew Mark; Yokoyama, Shiyoshi.

In: Optical Materials Express, Vol. 7, No. 7, 02.06.2017, p. 2182-2187.

Research output: Contribution to journalArticle

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