Abstract
High-quality silicon nitride (Si3N4) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si3N4 film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 104 are achieved. The LSCVD deposited Si3N4 istherefore a highly promising photonic integration platform for various integrated photonicapplications.
| Original language | English |
|---|---|
| Pages (from-to) | 2182-2187 |
| Number of pages | 6 |
| Journal | Optical Materials Express |
| Volume | 7 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jun 2 2017 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film. / Cheng, Xiaoyang; Hong, Jianxun; Spring, Andrew M.; Yokoyama, Shiyoshi.
In: Optical Materials Express, Vol. 7, No. 7, 02.06.2017, p. 2182-2187.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film
AU - Cheng, Xiaoyang
AU - Hong, Jianxun
AU - Spring, Andrew M.
AU - Yokoyama, Shiyoshi
PY - 2017/6/2
Y1 - 2017/6/2
N2 - High-quality silicon nitride (Si3N4) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si3N4 film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 104 are achieved. The LSCVD deposited Si3N4 istherefore a highly promising photonic integration platform for various integrated photonicapplications.
AB - High-quality silicon nitride (Si3N4) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si3N4 film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 104 are achieved. The LSCVD deposited Si3N4 istherefore a highly promising photonic integration platform for various integrated photonicapplications.
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U2 - 10.1364/OME.7.002182
DO - 10.1364/OME.7.002182
M3 - Article
AN - SCOPUS:85020392146
VL - 7
SP - 2182
EP - 2187
JO - Optical Materials Express
JF - Optical Materials Express
SN - 2159-3930
IS - 7
ER -