Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film

Xiaoyang Cheng; Jianxun Hong; Andrew M. Spring; Shiyoshi Yokoyama

doi:10.1364/OME.7.002182

Fabrication of a high-Q factor ring resonator using LSCVD deposited Si₃N₄ film

Xiaoyang Cheng, Jianxun Hong, Andrew M. Spring, Shiyoshi Yokoyama

Department of Advanced Device Materials

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

High-quality silicon nitride (Si₃N₄) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si₃N₄ film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si₃N₄ layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 10⁴ are achieved. The LSCVD deposited Si₃N₄ istherefore a highly promising photonic integration platform for various integrated photonicapplications.

Original language	English
Pages (from-to)	2182-2187
Number of pages	6
Journal	Optical Materials Express
Volume	7
Issue number	7
DOIs	https://doi.org/10.1364/OME.7.002182
Publication status	Published - Jun 2 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Access to Document

10.1364/OME.7.002182

Cite this

@article{91eff9e55419408c9dca6be471bd866f,

title = "Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film",

abstract = "High-quality silicon nitride (Si3N4) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si3N4 film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 104 are achieved. The LSCVD deposited Si3N4 istherefore a highly promising photonic integration platform for various integrated photonicapplications.",

author = "Xiaoyang Cheng and Jianxun Hong and Spring, {Andrew M.} and Shiyoshi Yokoyama",

note = "Publisher Copyright: {\textcopyright} 2017 Optical Society of America.",

year = "2017",

month = jun,

day = "2",

doi = "10.1364/OME.7.002182",

language = "English",

volume = "7",

pages = "2182--2187",

journal = "Optical Materials Express",

issn = "2159-3930",

publisher = "The Optical Society",

number = "7",

}

TY - JOUR

T1 - Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film

AU - Cheng, Xiaoyang

AU - Hong, Jianxun

AU - Spring, Andrew M.

AU - Yokoyama, Shiyoshi

PY - 2017/6/2

Y1 - 2017/6/2

N2 - High-quality silicon nitride (Si3N4) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si3N4 film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 104 are achieved. The LSCVD deposited Si3N4 istherefore a highly promising photonic integration platform for various integrated photonicapplications.

AB - High-quality silicon nitride (Si3N4) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si3N4 film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 104 are achieved. The LSCVD deposited Si3N4 istherefore a highly promising photonic integration platform for various integrated photonicapplications.

UR - http://www.scopus.com/inward/record.url?scp=85020392146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85020392146&partnerID=8YFLogxK

U2 - 10.1364/OME.7.002182

DO - 10.1364/OME.7.002182

M3 - Article

AN - SCOPUS:85020392146

VL - 7

SP - 2182

EP - 2187

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 7

ER -

Fabrication of a high-Q factor ring resonator using LSCVD deposited Si₃N₄ film

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this