TY - JOUR
T1 - Fabrication of (a-nc) boron carbide thin films via chemical vapor deposition using ortho-carborane
AU - Tu, Rong
AU - HU, Xuan
AU - Li, Jun
AU - Yang, Meijun
AU - Li, Qizhong
AU - Shi, Ji
AU - Li, Haiwen
AU - Ohmori, Hitoshi
AU - Goto, Takashi
AU - Zhang, Song
N1 - Funding Information:
This work was supported by the Science Challenge Project [No. TZ2016001]; the National Natural Science Foundation of China [Nos. 51861145306, 51872212 51972244 and 11602251]; and the 111 Project [B13035], and Joint Fund of Ministry of Education for Pre-research of Equipment [6141A02022257]. This research was also supported by the International Science & Technology Cooperation Program of China [2018YFE0103600, 2014DFA53090]; and the Technological Innovation of Hubei Province, China [2019AAA030].
Publisher Copyright:
© 2020, © 2020 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of The Korean Ceramic Society and The Ceramic Society of Japan.
PY - 2020/1/1
Y1 - 2020/1/1
N2 - Amorphous-nanocrystalline (a-nc) boron carbide thin films were prepared by chemical vapor deposition (CVD) by using ortho-carborane as a single-source precursor for inertial confinement fusion (ICF) application. The effects of deposition temperature (Tdep) and total pressure (Ptot) on chemical composition, microstructure, stoichiometry and morphology of the boron carbide films were investigated. The TEM results show that the structure of the film is mainly composed of amorphous boron carbide with dispersive nano-grains, which will be able to improve the mechanical properties of the film with relatively low roughness. The hardness of the (a-nc) boron carbide film obtained in this study reached 20.6 GPa, and roughness of 3.21 nm. The deposited films sized 0.2–1.9 μm in thickness with B/C atomic ratio ranged from 0.14 to 3.29. The deposition rate decreased with increasing deposition temperature and Ptot, while B/C ratio increased.
AB - Amorphous-nanocrystalline (a-nc) boron carbide thin films were prepared by chemical vapor deposition (CVD) by using ortho-carborane as a single-source precursor for inertial confinement fusion (ICF) application. The effects of deposition temperature (Tdep) and total pressure (Ptot) on chemical composition, microstructure, stoichiometry and morphology of the boron carbide films were investigated. The TEM results show that the structure of the film is mainly composed of amorphous boron carbide with dispersive nano-grains, which will be able to improve the mechanical properties of the film with relatively low roughness. The hardness of the (a-nc) boron carbide film obtained in this study reached 20.6 GPa, and roughness of 3.21 nm. The deposited films sized 0.2–1.9 μm in thickness with B/C atomic ratio ranged from 0.14 to 3.29. The deposition rate decreased with increasing deposition temperature and Ptot, while B/C ratio increased.
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U2 - 10.1080/21870764.2020.1743415
DO - 10.1080/21870764.2020.1743415
M3 - Article
AN - SCOPUS:85082929499
VL - 8
SP - 327
EP - 335
JO - Journal of Asian Ceramic Societies
JF - Journal of Asian Ceramic Societies
SN - 2187-0764
IS - 2
ER -