Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate

Tsuyoshi Fujimura, Akihiro Ikeda, Shin Ichi Etoh, Reiji Hattori, Yukinori Kuroki, Masanori Hidaka, Suk Sang Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we study about the fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages86-87
Number of pages2
ISBN (Electronic)4891140402, 9784891140403
DOIs
Publication statusPublished - 2003
EventInternational Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, Japan
Duration: Oct 29 2003Oct 31 2003

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2003
CountryJapan
CityTokyo
Period10/29/0310/31/03

Fingerprint

Masks
Membranes
Fabrication
X rays
Substrates

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Fujimura, T., Ikeda, A., Etoh, S. I., Hattori, R., Kuroki, Y., Hidaka, M., & Chang, S. S. (2003). Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003 (pp. 86-87). [1268531] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2003.1268531

Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. / Fujimura, Tsuyoshi; Ikeda, Akihiro; Etoh, Shin Ichi; Hattori, Reiji; Kuroki, Yukinori; Hidaka, Masanori; Chang, Suk Sang.

Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 86-87 1268531.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujimura, T, Ikeda, A, Etoh, SI, Hattori, R, Kuroki, Y, Hidaka, M & Chang, SS 2003, Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. in Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003., 1268531, Institute of Electrical and Electronics Engineers Inc., pp. 86-87, International Microprocesses and Nanotechnology Conference, MNC 2003, Tokyo, Japan, 10/29/03. https://doi.org/10.1109/IMNC.2003.1268531
Fujimura T, Ikeda A, Etoh SI, Hattori R, Kuroki Y, Hidaka M et al. Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 86-87. 1268531 https://doi.org/10.1109/IMNC.2003.1268531
Fujimura, Tsuyoshi ; Ikeda, Akihiro ; Etoh, Shin Ichi ; Hattori, Reiji ; Kuroki, Yukinori ; Hidaka, Masanori ; Chang, Suk Sang. / Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 86-87
@inproceedings{00762b486eb0445d842494023c0b22ad,
title = "Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate",
abstract = "In this paper we study about the fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate.",
author = "Tsuyoshi Fujimura and Akihiro Ikeda and Etoh, {Shin Ichi} and Reiji Hattori and Yukinori Kuroki and Masanori Hidaka and Chang, {Suk Sang}",
year = "2003",
doi = "10.1109/IMNC.2003.1268531",
language = "English",
pages = "86--87",
booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate

AU - Fujimura, Tsuyoshi

AU - Ikeda, Akihiro

AU - Etoh, Shin Ichi

AU - Hattori, Reiji

AU - Kuroki, Yukinori

AU - Hidaka, Masanori

AU - Chang, Suk Sang

PY - 2003

Y1 - 2003

N2 - In this paper we study about the fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate.

AB - In this paper we study about the fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=84949196802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949196802&partnerID=8YFLogxK

U2 - 10.1109/IMNC.2003.1268531

DO - 10.1109/IMNC.2003.1268531

M3 - Conference contribution

AN - SCOPUS:84949196802

SP - 86

EP - 87

BT - Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

PB - Institute of Electrical and Electronics Engineers Inc.

ER -