Fabrication of all-epitaxial high-Tc SIS tunnel structures

Yasuo Tazoh, Junya Kobayashi, Masashi Mukaida, Shintaro Miyazawa

Research output: Contribution to journalArticlepeer-review

Abstract

Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.

Original languageEnglish
Pages (from-to)1199-1202
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE77-C
Issue number8
Publication statusPublished - Aug 1 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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