Fabrication of all-epitaxial high-Tc SIS tunnel structures

Yasuo Tazoh, Junya Kobayashi, Masashi Mukaida, Shintaro Miyazawa

Research output: Contribution to journalArticle

Abstract

Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.

Original languageEnglish
Pages (from-to)1199-1202
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE77-C
Issue number8
Publication statusPublished - Aug 1 1994
Externally publishedYes

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Tunnel junctions
Tunnels
Insulating materials
Fabrication
Superconducting films
Lattice mismatch
Perovskite
Oxides
Electric properties
Thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Tazoh, Y., Kobayashi, J., Mukaida, M., & Miyazawa, S. (1994). Fabrication of all-epitaxial high-Tc SIS tunnel structures. IEICE Transactions on Electronics, E77-C(8), 1199-1202.

Fabrication of all-epitaxial high-Tc SIS tunnel structures. / Tazoh, Yasuo; Kobayashi, Junya; Mukaida, Masashi; Miyazawa, Shintaro.

In: IEICE Transactions on Electronics, Vol. E77-C, No. 8, 01.08.1994, p. 1199-1202.

Research output: Contribution to journalArticle

Tazoh, Y, Kobayashi, J, Mukaida, M & Miyazawa, S 1994, 'Fabrication of all-epitaxial high-Tc SIS tunnel structures', IEICE Transactions on Electronics, vol. E77-C, no. 8, pp. 1199-1202.
Tazoh Y, Kobayashi J, Mukaida M, Miyazawa S. Fabrication of all-epitaxial high-Tc SIS tunnel structures. IEICE Transactions on Electronics. 1994 Aug 1;E77-C(8):1199-1202.
Tazoh, Yasuo ; Kobayashi, Junya ; Mukaida, Masashi ; Miyazawa, Shintaro. / Fabrication of all-epitaxial high-Tc SIS tunnel structures. In: IEICE Transactions on Electronics. 1994 ; Vol. E77-C, No. 8. pp. 1199-1202.
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