Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.
|Number of pages||4|
|Journal||IEICE Transactions on Electronics|
|Publication status||Published - Aug 1 1994|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering