Fabrication of all-epitaxial high-Tc SIS tunnel structures

Yasuo Tazoh; Junya Kobayashi; Masashi Mukaida; Shintaro Miyazawa

Fabrication of all-epitaxial high-T_c SIS tunnel structures

Yasuo Tazoh, Junya Kobayashi, Masashi Mukaida, Shintaro Miyazawa

Research output: Contribution to journal › Article › peer-review

Abstract

Fabrication of all-epitaxial high-T_c SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO₃ and NdGaO₃, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-T_c SIS tunnel junctions with good electrical properties.

Original language	English
Pages (from-to)	1199-1202
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E77-C
Issue number	8
Publication status	Published - Aug 1 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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author = "Yasuo Tazoh and Junya Kobayashi and Masashi Mukaida and Shintaro Miyazawa",

year = "1994",

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AU - Tazoh, Yasuo

AU - Kobayashi, Junya

AU - Mukaida, Masashi

AU - Miyazawa, Shintaro

PY - 1994/8/1

Y1 - 1994/8/1

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AB - Fabrication of all-epitaxial high-Tc SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxides, PrGaO3 and NdGaO3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-Tc SIS tunnel junctions with good electrical properties.

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Fabrication of all-epitaxial high-T_c SIS tunnel structures

Abstract

All Science Journal Classification (ASJC) codes

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