Abstract
Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.
Original language | English |
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Title of host publication | Organic Optoelectronics and Photonics III |
Volume | 6999 |
DOIs | |
Publication status | Published - Jun 30 2008 |
Event | Organic Optoelectronics and Photonics III - Strasbourg, France Duration: Apr 7 2008 → Apr 10 2008 |
Other
Other | Organic Optoelectronics and Photonics III |
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Country/Territory | France |
City | Strasbourg |
Period | 4/7/08 → 4/10/08 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering