Fabrication of an oxysulfide of bismuth Bi2O2S and its photocatalytic activity in a Bi2O2S/In 2O3 composite

Adele L. Pacquette, Hidehisa Hagiwara, Tatsumi Ishihara, Andrew A. Gewirth

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Oxide-chalcogenide semiconductors are proposed in order to attain a smaller band gap and improve efficiencies in comparison to oxides for light induced total water splitting. Dibismuthoxysulfide (Bi2O2S) was synthesized under relatively mild hydrothermal conditions. The synthesized compound was characterized by XRD, SEM and UV-vis DRS techniques. The band gap of 1.5 eV measured is smaller than 2.8 eV of bismuth oxide (Bi2O 3). Photoelectrochemical studies showed that it is possible to utilize Bi2O2S and the Bi2O2S/ In2O3 composite as n-type semiconductors. Dye modified Bi2O2S/In2O3 showed promise for the catalysis of water splitting.

Original languageEnglish
Pages (from-to)27-36
Number of pages10
JournalJournal of Photochemistry and Photobiology A: Chemistry
Volume277
DOIs
Publication statusPublished - Mar 1 2014

Fingerprint

Bismuth
water splitting
bismuth
Energy gap
Fabrication
bismuth oxides
fabrication
n-type semiconductors
Oxides
composite materials
oxides
Water
Composite materials
Catalysis
catalysis
Coloring Agents
Dyes
dyes
Semiconductor materials
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fabrication of an oxysulfide of bismuth Bi2O2S and its photocatalytic activity in a Bi2O2S/In 2O3 composite. / Pacquette, Adele L.; Hagiwara, Hidehisa; Ishihara, Tatsumi; Gewirth, Andrew A.

In: Journal of Photochemistry and Photobiology A: Chemistry, Vol. 277, 01.03.2014, p. 27-36.

Research output: Contribution to journalArticle

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