Fabrication of an oxysulfide of bismuth Bi2O2S and its photocatalytic activity in a Bi2O2S/In 2O3 composite

Adele L. Pacquette; Hidehisa Hagiwara; Tatsumi Ishihara; Andrew A. Gewirth

doi:10.1016/j.jphotochem.2013.12.007

Fabrication of an oxysulfide of bismuth Bi₂O₂S and its photocatalytic activity in a Bi₂O₂S/In ₂O₃ composite

Adele L. Pacquette, Hidehisa Hagiwara, Tatsumi Ishihara, Andrew A. Gewirth

Materials Science and Engineering, School of Engineering

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Oxide-chalcogenide semiconductors are proposed in order to attain a smaller band gap and improve efficiencies in comparison to oxides for light induced total water splitting. Dibismuthoxysulfide (Bi₂O₂S) was synthesized under relatively mild hydrothermal conditions. The synthesized compound was characterized by XRD, SEM and UV-vis DRS techniques. The band gap of 1.5 eV measured is smaller than 2.8 eV of bismuth oxide (Bi₂O ₃). Photoelectrochemical studies showed that it is possible to utilize Bi₂O₂S and the Bi₂O₂S/ In₂O₃ composite as n-type semiconductors. Dye modified Bi₂O₂S/In₂O₃ showed promise for the catalysis of water splitting.

Original language	English
Pages (from-to)	27-36
Number of pages	10
Journal	Journal of Photochemistry and Photobiology A: Chemistry
Volume	277
DOIs	https://doi.org/10.1016/j.jphotochem.2013.12.007
Publication status	Published - Mar 1 2014

All Science Journal Classification (ASJC) codes

Chemistry(all)
Chemical Engineering(all)
Physics and Astronomy(all)

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title = "Fabrication of an oxysulfide of bismuth Bi2O2S and its photocatalytic activity in a Bi2O2S/In 2O3 composite",

abstract = "Oxide-chalcogenide semiconductors are proposed in order to attain a smaller band gap and improve efficiencies in comparison to oxides for light induced total water splitting. Dibismuthoxysulfide (Bi2O2S) was synthesized under relatively mild hydrothermal conditions. The synthesized compound was characterized by XRD, SEM and UV-vis DRS techniques. The band gap of 1.5 eV measured is smaller than 2.8 eV of bismuth oxide (Bi2O 3). Photoelectrochemical studies showed that it is possible to utilize Bi2O2S and the Bi2O2S/ In2O3 composite as n-type semiconductors. Dye modified Bi2O2S/In2O3 showed promise for the catalysis of water splitting.",

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T1 - Fabrication of an oxysulfide of bismuth Bi2O2S and its photocatalytic activity in a Bi2O2S/In 2O3 composite

AU - Pacquette, Adele L.

AU - Hagiwara, Hidehisa

AU - Ishihara, Tatsumi

AU - Gewirth, Andrew A.

PY - 2014/3/1

Y1 - 2014/3/1

N2 - Oxide-chalcogenide semiconductors are proposed in order to attain a smaller band gap and improve efficiencies in comparison to oxides for light induced total water splitting. Dibismuthoxysulfide (Bi2O2S) was synthesized under relatively mild hydrothermal conditions. The synthesized compound was characterized by XRD, SEM and UV-vis DRS techniques. The band gap of 1.5 eV measured is smaller than 2.8 eV of bismuth oxide (Bi2O 3). Photoelectrochemical studies showed that it is possible to utilize Bi2O2S and the Bi2O2S/ In2O3 composite as n-type semiconductors. Dye modified Bi2O2S/In2O3 showed promise for the catalysis of water splitting.

AB - Oxide-chalcogenide semiconductors are proposed in order to attain a smaller band gap and improve efficiencies in comparison to oxides for light induced total water splitting. Dibismuthoxysulfide (Bi2O2S) was synthesized under relatively mild hydrothermal conditions. The synthesized compound was characterized by XRD, SEM and UV-vis DRS techniques. The band gap of 1.5 eV measured is smaller than 2.8 eV of bismuth oxide (Bi2O 3). Photoelectrochemical studies showed that it is possible to utilize Bi2O2S and the Bi2O2S/ In2O3 composite as n-type semiconductors. Dye modified Bi2O2S/In2O3 showed promise for the catalysis of water splitting.

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