TY - JOUR
T1 - Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction
AU - Yamamoto, Keisuke
AU - Okamoto, Hayato
AU - Wang, Dong
AU - Nakashima, Hiroshi
N1 - Funding Information:
This work was partially supported by ?Interdisciplinary Programs in Education and Projects in Research Development (No. 27122), Kyushu University, Japan?, and Japan Society for the Promotion of Science (JSPS) Core-to-Core Program, A. Advanced Research Networks. Authors deeply acknowledge Prof. Mitsuhara and Mr. Maekura for their kind cooperation for TEM observation.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short channel effect and to reduce the off-state current. An obstacle to implement a STS FET with a high mobility Ge channel was to form a metal/Ge contact with a low electron barrier height (ΦBN). Recently, we succeeded in the fabrication of a TiN/Ge contact with an extremely low ΦBN. In this study, a Ge-STS n-channel FET was fabricated, here PtGe/Ge and TiN/Ge contacts were used as the source and the drain. The device showed well-behaved transistor operation. From the current-voltage measurements in the wide temperature range of 160–300 K, the conduction mechanism from the source to the channel is confirmed to be field emission tunneling. This result will be the first step toward achieving a high-performance Ge-STS n-FET.
AB - An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short channel effect and to reduce the off-state current. An obstacle to implement a STS FET with a high mobility Ge channel was to form a metal/Ge contact with a low electron barrier height (ΦBN). Recently, we succeeded in the fabrication of a TiN/Ge contact with an extremely low ΦBN. In this study, a Ge-STS n-channel FET was fabricated, here PtGe/Ge and TiN/Ge contacts were used as the source and the drain. The device showed well-behaved transistor operation. From the current-voltage measurements in the wide temperature range of 160–300 K, the conduction mechanism from the source to the channel is confirmed to be field emission tunneling. This result will be the first step toward achieving a high-performance Ge-STS n-FET.
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U2 - 10.1016/j.mssp.2016.09.024
DO - 10.1016/j.mssp.2016.09.024
M3 - Article
AN - SCOPUS:85001099631
VL - 70
SP - 283
EP - 287
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -