Fabrication of BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)

H. Tobita, K. Notoh, Kohei Higashikawa, Masayoshi Inoue, Takanobu Kiss, T. Kato, T. Hirayama, M. Yoshizumi, T. Izumi, Y. Shiohara

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Abstract

The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1 Ba 2 Cu 3 O 7-δ coated conductors has been studied with a view to improving the I c B-θ properties. BaMO x (M=metal) was introduced into Gd 1 Ba 2 Cu 3 O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors showed remarkably good I c B-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2 @77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.

Original languageEnglish
Article number062002
JournalSuperconductor Science and Technology
Volume25
Issue number6
DOIs
Publication statusPublished - Jun 1 2012

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Liquid nitrogen
liquid nitrogen
Film thickness
conductors
Fabrication
fabrication
film thickness
Pulsed laser deposition
Nanorods
Thick films
Metals
Temperature
nanorods
pulsed laser deposition
thick films
temperature
metals

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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Fabrication of BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K) . / Tobita, H.; Notoh, K.; Higashikawa, Kohei; Inoue, Masayoshi; Kiss, Takanobu; Kato, T.; Hirayama, T.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.

In: Superconductor Science and Technology, Vol. 25, No. 6, 062002, 01.06.2012.

Research output: Contribution to journal › Article

Tobita, H, Notoh, K, Higashikawa, K, Inoue, M, Kiss, T, Kato, T, Hirayama, T, Yoshizumi, M, Izumi, T & Shiohara, Y 2012, ' Fabrication of BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K) ', Superconductor Science and Technology, vol. 25, no. 6, 062002. https://doi.org/10.1088/0953-2048/25/6/062002
Tobita H, Notoh K, Higashikawa K, Inoue M, Kiss T, Kato T et al. Fabrication of BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K) Superconductor Science and Technology. 2012 Jun 1;25(6). 062002. https://doi.org/10.1088/0953-2048/25/6/062002
Tobita, H. ; Notoh, K. ; Higashikawa, Kohei ; Inoue, Masayoshi ; Kiss, Takanobu ; Kato, T. ; Hirayama, T. ; Yoshizumi, M. ; Izumi, T. ; Shiohara, Y. / Fabrication of BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K) In: Superconductor Science and Technology. 2012 ; Vol. 25, No. 6.
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