Fabrication of BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)

H. Tobita, K. Notoh, K. Higashikawa, M. Inoue, T. Kiss, T. Kato, T. Hirayama, M. Yoshizumi, T. Izumi, Y. Shiohara

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Abstract

The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1Ba 2Cu 3O 7-δ coated conductors has been studied with a view to improving the I cB-θ properties. BaMO x (M=metal) was introduced into Gd 1Ba 2Cu 3O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors showed remarkably good I cB-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2@77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.

Original languageEnglish
Article number062002
JournalSuperconductor Science and Technology
Volume25
Issue number6
DOIs
Publication statusPublished - Jun 1 2012

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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