The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1Ba 2Cu 3O 7-δ coated conductors has been studied with a view to improving the I cB-θ properties. BaMO x (M=metal) was introduced into Gd 1Ba 2Cu 3O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors showed remarkably good I cB-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2@77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Condensed Matter Physics
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry