TY - JOUR
T1 - Fabrication of BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)
AU - Tobita, H.
AU - Notoh, K.
AU - Higashikawa, K.
AU - Inoue, M.
AU - Kiss, T.
AU - Kato, T.
AU - Hirayama, T.
AU - Yoshizumi, M.
AU - Izumi, T.
AU - Shiohara, Y.
PY - 2012/6/1
Y1 - 2012/6/1
N2 - The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1Ba 2Cu 3O 7-δ coated conductors has been studied with a view to improving the I cB-θ properties. BaMO x (M=metal) was introduced into Gd 1Ba 2Cu 3O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors showed remarkably good I cB-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2@77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.
AB - The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1Ba 2Cu 3O 7-δ coated conductors has been studied with a view to improving the I cB-θ properties. BaMO x (M=metal) was introduced into Gd 1Ba 2Cu 3O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors showed remarkably good I cB-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2@77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.
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U2 - 10.1088/0953-2048/25/6/062002
DO - 10.1088/0953-2048/25/6/062002
M3 - Article
AN - SCOPUS:84861149567
VL - 25
JO - Superconductor Science and Technology
JF - Superconductor Science and Technology
SN - 0953-2048
IS - 6
M1 - 062002
ER -