Fabrication of BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)

H. Tobita; K. Notoh; K. Higashikawa; M. Inoue; T. Kiss; T. Kato; T. Hirayama; M. Yoshizumi; T. Izumi; Y. Shiohara

doi:10.1088/0953-2048/25/6/062002

Fabrication of BaHfO ₃ doped Gd ₁Ba ₂Cu ₃O _7-δ coated conductors with the high I _c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)

H. Tobita, K. Notoh, K. Higashikawa, M. Inoue, T. Kiss, T. Kato, T. Hirayama, M. Yoshizumi, T. Izumi, Y. Shiohara

Section of Measurement and Control Engineering

Research output: Contribution to journal › Article › peer-review

160 Citations (Scopus)

Abstract

The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd ₁Ba ₂Cu ₃O _7-δ coated conductors has been studied with a view to improving the I _cB-θ properties. BaMO _x (M=metal) was introduced into Gd ₁Ba ₂Cu ₃O _7-δ film, with the expectation of forming fine nanorods such as BaZrO ₃ ones. BaHfO ₃ doped Gd ₁Ba ₂Cu ₃O _7-δ coated conductors showed remarkably good I _cB-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I _c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J _c value of 0.3MAcm ²@77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I _c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.

Original language	English
Article number	062002
Journal	Superconductor Science and Technology
Volume	25
Issue number	6
DOIs	https://doi.org/10.1088/0953-2048/25/6/062002
Publication status	Published - Jun 1 2012

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0953-2048/25/6/062002

Fingerprint Dive into the research topics of 'Fabrication of BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)'. Together they form a unique fingerprint.

Cite this

Tobita, H., Notoh, K., Higashikawa, K., Inoue, M., Kiss, T., Kato, T., Hirayama, T., Yoshizumi, M., Izumi, T., & Shiohara, Y. (2012). Fabrication of BaHfO ₃ doped Gd ₁Ba ₂Cu ₃O _7-δ coated conductors with the high I _c of 85A/cm-w under 3T at liquid nitrogen temperature (77K). Superconductor Science and Technology, 25(6), [062002]. https://doi.org/10.1088/0953-2048/25/6/062002

Fabrication of BaHfO ₃ doped Gd ₁Ba ₂Cu ₃O _7-δ coated conductors with the high I _c of 85A/cm-w under 3T at liquid nitrogen temperature (77K). / Tobita, H.; Notoh, K.; Higashikawa, K.; Inoue, M.; Kiss, T.; Kato, T.; Hirayama, T.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.

In: Superconductor Science and Technology, Vol. 25, No. 6, 062002, 01.06.2012.

Research output: Contribution to journal › Article › peer-review

Tobita, H, Notoh, K, Higashikawa, K, Inoue, M, Kiss, T, Kato, T, Hirayama, T, Yoshizumi, M, Izumi, T & Shiohara, Y 2012, 'Fabrication of BaHfO ₃ doped Gd ₁Ba ₂Cu ₃O _7-δ coated conductors with the high I _c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)', Superconductor Science and Technology, vol. 25, no. 6, 062002. https://doi.org/10.1088/0953-2048/25/6/062002

@article{1cd12434cd7d4860924ebd737ded5c95,

title = "Fabrication of BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)",

abstract = "The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1Ba 2Cu 3O 7-δ coated conductors has been studied with a view to improving the I cB-θ properties. BaMO x (M=metal) was introduced into Gd 1Ba 2Cu 3O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors showed remarkably good I cB-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2@77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.",

author = "H. Tobita and K. Notoh and K. Higashikawa and M. Inoue and T. Kiss and T. Kato and T. Hirayama and M. Yoshizumi and T. Izumi and Y. Shiohara",

year = "2012",

month = jun,

day = "1",

doi = "10.1088/0953-2048/25/6/062002",

language = "English",

volume = "25",

journal = "Superconductor Science and Technology",

issn = "0953-2048",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Fabrication of BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)

AU - Tobita, H.

AU - Notoh, K.

AU - Higashikawa, K.

AU - Inoue, M.

AU - Kiss, T.

AU - Kato, T.

AU - Hirayama, T.

AU - Yoshizumi, M.

AU - Izumi, T.

AU - Shiohara, Y.

PY - 2012/6/1

Y1 - 2012/6/1

N2 - The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1Ba 2Cu 3O 7-δ coated conductors has been studied with a view to improving the I cB-θ properties. BaMO x (M=metal) was introduced into Gd 1Ba 2Cu 3O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors showed remarkably good I cB-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2@77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.

AB - The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1Ba 2Cu 3O 7-δ coated conductors has been studied with a view to improving the I cB-θ properties. BaMO x (M=metal) was introduced into Gd 1Ba 2Cu 3O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1Ba 2Cu 3O 7-δ coated conductors showed remarkably good I cB-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2@77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.

UR - http://www.scopus.com/inward/record.url?scp=84861149567&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861149567&partnerID=8YFLogxK

U2 - 10.1088/0953-2048/25/6/062002

DO - 10.1088/0953-2048/25/6/062002

M3 - Article

AN - SCOPUS:84861149567

VL - 25

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

SN - 0953-2048

IS - 6

M1 - 062002

ER -

Fabrication of BaHfO ₃ doped Gd ₁Ba ₂Cu ₃O _7-δ coated conductors with the high I _c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint Dive into the research topics of 'Fabrication of BaHfO <sub>3</sub> doped Gd <sub>1</sub>Ba <sub>2</sub>Cu <sub>3</sub>O <sub>7-δ</sub> coated conductors with the high I <sub>c</sub> of 85A/cm-w under 3T at liquid nitrogen temperature (77K)'. Together they form a unique fingerprint.

Cite this