TY - JOUR
T1 - Fabrication of Bi-doped YIG optical thin film for electric current sensor by pulsed laser deposition
AU - Hayashi, Hiromitsu
AU - Iwasa, Souhachi
AU - Vasa, Nilesh J.
AU - Yoshitake, Tsuyoshi
AU - Ueda, Kiyotaka
AU - Yokoyama, Shigeru
AU - Higuchi, Sadao
AU - Takeshita, Hirohito
AU - Nakahara, Michitaka
N1 - Funding Information:
This work was financially supported in part by Kyushu Electric Power Co., Inc. The film preparation using the ArF excimer laser was carried out at the Institute for Ionized Gas and Laser Research, Kyushu University.
PY - 2002
Y1 - 2002
N2 - Bi-doped yttrium iron garnet (Bi x Y 3-x Fe 5 O 12 , Bi:YIG) thin films, which can be used as electric current sensors, are grown on Gd 3 Ga 5 O 12 (GGG) substrates by pulsed laser deposition (PLD) using an ArF excimer laser. The growth condition for high quality epitaxial Bi:YIG thin films is investigated by varying the PLD process parameters, such as the substrate temperature and ambient oxygen gas pressure. The epitaxial film growth is attained at the substrate temperature of around 500 °C and at ambient oxygen pressure between 125 and 175 mTorr. The optical properties of epitaxial films are measured and the maximum magneto-optic sensitivity coefficient is observed to be 44.1 °/T with a film thickness of about 0.7 μm at a wavelength of 500 nm. The results indicate that the PLD technique can be useful for realizing a miniature current sensing device with the Bi:YIG thin film.
AB - Bi-doped yttrium iron garnet (Bi x Y 3-x Fe 5 O 12 , Bi:YIG) thin films, which can be used as electric current sensors, are grown on Gd 3 Ga 5 O 12 (GGG) substrates by pulsed laser deposition (PLD) using an ArF excimer laser. The growth condition for high quality epitaxial Bi:YIG thin films is investigated by varying the PLD process parameters, such as the substrate temperature and ambient oxygen gas pressure. The epitaxial film growth is attained at the substrate temperature of around 500 °C and at ambient oxygen pressure between 125 and 175 mTorr. The optical properties of epitaxial films are measured and the maximum magneto-optic sensitivity coefficient is observed to be 44.1 °/T with a film thickness of about 0.7 μm at a wavelength of 500 nm. The results indicate that the PLD technique can be useful for realizing a miniature current sensing device with the Bi:YIG thin film.
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U2 - 10.1016/S0169-4332(02)00364-1
DO - 10.1016/S0169-4332(02)00364-1
M3 - Conference article
AN - SCOPUS:0036428278
VL - 197-198
SP - 463
EP - 466
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
T2 - Cola 2001
Y2 - 1 October 2001 through 1 October 2001
ER -