Fabrication of Bi-doped YIG optical thin film for electric current sensor by pulsed laser deposition

Hiromitsu Hayashi; Souhachi Iwasa; Nilesh J. Vasa; Tsuyoshi Yoshitake; Kiyotaka Ueda; Shigeru Yokoyama; Sadao Higuchi; Hirohito Takeshita; Michitaka Nakahara

doi:10.1016/S0169-4332(02)00364-1

Fabrication of Bi-doped YIG optical thin film for electric current sensor by pulsed laser deposition

Hiromitsu Hayashi, Souhachi Iwasa, Nilesh J. Vasa, Tsuyoshi Yoshitake, Kiyotaka Ueda, Shigeru Yokoyama, Sadao Higuchi, Hirohito Takeshita, Michitaka Nakahara

Research output: Contribution to journal › Conference article

26 Citations (Scopus)

Abstract

Bi-doped yttrium iron garnet (Bi _x Y _3-x Fe ₅ O ₁₂ , Bi:YIG) thin films, which can be used as electric current sensors, are grown on Gd ₃ Ga ₅ O ₁₂ (GGG) substrates by pulsed laser deposition (PLD) using an ArF excimer laser. The growth condition for high quality epitaxial Bi:YIG thin films is investigated by varying the PLD process parameters, such as the substrate temperature and ambient oxygen gas pressure. The epitaxial film growth is attained at the substrate temperature of around 500 °C and at ambient oxygen pressure between 125 and 175 mTorr. The optical properties of epitaxial films are measured and the maximum magneto-optic sensitivity coefficient is observed to be 44.1 °/T with a film thickness of about 0.7 μm at a wavelength of 500 nm. The results indicate that the PLD technique can be useful for realizing a miniature current sensing device with the Bi:YIG thin film.

Original language	English
Pages (from-to)	463-466
Number of pages	4
Journal	Applied Surface Science
Volume	197-198
DOIs	https://doi.org/10.1016/S0169-4332(02)00364-1
Publication status	Published - 2002
Event	Cola 2001 - Tsukuba, Japan Duration: Oct 1 2001 → Oct 1 2001

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Hayashi, H., Iwasa, S., Vasa, N. J., Yoshitake, T., Ueda, K., Yokoyama, S., Higuchi, S., Takeshita, H., & Nakahara, M. (2002). Fabrication of Bi-doped YIG optical thin film for electric current sensor by pulsed laser deposition. Applied Surface Science, 197-198, 463-466. https://doi.org/10.1016/S0169-4332(02)00364-1

Fabrication of Bi-doped YIG optical thin film for electric current sensor by pulsed laser deposition. / Hayashi, Hiromitsu; Iwasa, Souhachi; Vasa, Nilesh J.; Yoshitake, Tsuyoshi; Ueda, Kiyotaka; Yokoyama, Shigeru; Higuchi, Sadao; Takeshita, Hirohito; Nakahara, Michitaka.

In: Applied Surface Science, Vol. 197-198, 2002, p. 463-466.

Research output: Contribution to journal › Conference article

@article{b252bef682bb4e338ba3de36d7544a73,

title = "Fabrication of Bi-doped YIG optical thin film for electric current sensor by pulsed laser deposition",

abstract = " Bi-doped yttrium iron garnet (Bi x Y 3-x Fe 5 O 12 , Bi:YIG) thin films, which can be used as electric current sensors, are grown on Gd 3 Ga 5 O 12 (GGG) substrates by pulsed laser deposition (PLD) using an ArF excimer laser. The growth condition for high quality epitaxial Bi:YIG thin films is investigated by varying the PLD process parameters, such as the substrate temperature and ambient oxygen gas pressure. The epitaxial film growth is attained at the substrate temperature of around 500 °C and at ambient oxygen pressure between 125 and 175 mTorr. The optical properties of epitaxial films are measured and the maximum magneto-optic sensitivity coefficient is observed to be 44.1 °/T with a film thickness of about 0.7 μm at a wavelength of 500 nm. The results indicate that the PLD technique can be useful for realizing a miniature current sensing device with the Bi:YIG thin film.",

author = "Hiromitsu Hayashi and Souhachi Iwasa and Vasa, {Nilesh J.} and Tsuyoshi Yoshitake and Kiyotaka Ueda and Shigeru Yokoyama and Sadao Higuchi and Hirohito Takeshita and Michitaka Nakahara",

year = "2002",

doi = "10.1016/S0169-4332(02)00364-1",

language = "English",

volume = "197-198",

pages = "463--466",

journal = "Applied Surface Science",

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note = "Cola 2001 ; Conference date: 01-10-2001 Through 01-10-2001",

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T1 - Fabrication of Bi-doped YIG optical thin film for electric current sensor by pulsed laser deposition

AU - Hayashi, Hiromitsu

AU - Iwasa, Souhachi

AU - Vasa, Nilesh J.

AU - Yoshitake, Tsuyoshi

AU - Ueda, Kiyotaka

AU - Yokoyama, Shigeru

AU - Higuchi, Sadao

AU - Takeshita, Hirohito

AU - Nakahara, Michitaka

PY - 2002

Y1 - 2002

N2 - Bi-doped yttrium iron garnet (Bi x Y 3-x Fe 5 O 12 , Bi:YIG) thin films, which can be used as electric current sensors, are grown on Gd 3 Ga 5 O 12 (GGG) substrates by pulsed laser deposition (PLD) using an ArF excimer laser. The growth condition for high quality epitaxial Bi:YIG thin films is investigated by varying the PLD process parameters, such as the substrate temperature and ambient oxygen gas pressure. The epitaxial film growth is attained at the substrate temperature of around 500 °C and at ambient oxygen pressure between 125 and 175 mTorr. The optical properties of epitaxial films are measured and the maximum magneto-optic sensitivity coefficient is observed to be 44.1 °/T with a film thickness of about 0.7 μm at a wavelength of 500 nm. The results indicate that the PLD technique can be useful for realizing a miniature current sensing device with the Bi:YIG thin film.

AB - Bi-doped yttrium iron garnet (Bi x Y 3-x Fe 5 O 12 , Bi:YIG) thin films, which can be used as electric current sensors, are grown on Gd 3 Ga 5 O 12 (GGG) substrates by pulsed laser deposition (PLD) using an ArF excimer laser. The growth condition for high quality epitaxial Bi:YIG thin films is investigated by varying the PLD process parameters, such as the substrate temperature and ambient oxygen gas pressure. The epitaxial film growth is attained at the substrate temperature of around 500 °C and at ambient oxygen pressure between 125 and 175 mTorr. The optical properties of epitaxial films are measured and the maximum magneto-optic sensitivity coefficient is observed to be 44.1 °/T with a film thickness of about 0.7 μm at a wavelength of 500 nm. The results indicate that the PLD technique can be useful for realizing a miniature current sensing device with the Bi:YIG thin film.

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U2 - 10.1016/S0169-4332(02)00364-1

DO - 10.1016/S0169-4332(02)00364-1

M3 - Conference article

AN - SCOPUS:0036428278

VL - 197-198

SP - 463

EP - 466

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

T2 - Cola 2001

Y2 - 1 October 2001 through 1 October 2001

ER -