Fabrication of bistable prestressed curved-beam

Ivransa Z. Pane, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We have shown that prestressed curved-beam of single crystal Si can be fabricated through the sequences of the standard CMOS process using SOI. The theoritical analysis procedure for the bistable operation was established. Miniaturized bistable curved-beam will be applied to memory devices.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages390-391
Number of pages2
DOIs
Publication statusPublished - Dec 1 2007
Events20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan
Duration: Nov 5 2007Nov 8 2007

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Other

Others20th International Microprocesses and Nanotechnology Conference, MNC 2007
CountryJapan
CityKyoto
Period11/5/0711/8/07

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Fabrication of bistable prestressed curved-beam'. Together they form a unique fingerprint.

Cite this