Fabrication of current-perpendicular-to-plane junctions based on Fe 3Si/FeSi2 multilayered films by lift-off

Y. Noda; K. Sakai; T. Sonoda; D. Tsumagari; K. Takeda; T. Yoshitake

doi:10.1149/05010.0223ecst

Fabrication of current-perpendicular-to-plane junctions based on Fe ₃Si/FeSi₂ multilayered films by lift-off

Y. Noda, K. Sakai, T. Sonoda, D. Tsumagari, K. Takeda, T. Yoshitake

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Current-perpendicular-to-plane (CPP) junctions comprising Fe ₃Si/FeSi₂ multilayers were prepared by a lift-off process combined with lithography techniques. The Fe₃Si/FeSi₂ multilayered films were grown on Si (111) substrates at room temperature by facing-targets direct-current sputtering. From the X-ray diffraction measurements, it was confirmed that the Fe₃Si layers were epitaxially grown from the first layer on Si (111) up to the top layer across the FeSi2 layers with the same orientation relationship as that in the first layer. The CPP junctions, wherein ferromagnetic interlayer coupling across the FeSi2 spacer layers was induced, exhibited an obvious change in the electrical resistance for the current injection, which might be due to currentinduced magnetization switching.

Original language	English
Title of host publication	Magnetic Materials, Processes, and Devices 12
Publisher	Electrochemical Society Inc.
Pages	223-228
Number of pages	6
Edition	10
ISBN (Print)	9781607683582
DOIs	https://doi.org/10.1149/05010.0223ecst
Publication status	Published - 2013
Event	12th International Symposium on Magnetic Materials, Processes and Devices - PRiME 2012 - Honolulu, HI, United States Duration: Oct 8 2012 → Oct 10 2012

Publication series

Name	ECS Transactions
Number	10
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	12th International Symposium on Magnetic Materials, Processes and Devices - PRiME 2012
Country/Territory	United States
City	Honolulu, HI
Period	10/8/12 → 10/10/12

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/05010.0223ecst

Cite this

Noda, Y., Sakai, K., Sonoda, T., Tsumagari, D., Takeda, K., & Yoshitake, T. (2013). Fabrication of current-perpendicular-to-plane junctions based on Fe ₃Si/FeSi₂ multilayered films by lift-off. In Magnetic Materials, Processes, and Devices 12 (10 ed., pp. 223-228). (ECS Transactions; Vol. 50, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/05010.0223ecst

Fabrication of current-perpendicular-to-plane junctions based on Fe ₃Si/FeSi₂ multilayered films by lift-off. / Noda, Y.; Sakai, K.; Sonoda, T. et al.
Magnetic Materials, Processes, and Devices 12. 10. ed. Electrochemical Society Inc., 2013. p. 223-228 (ECS Transactions; Vol. 50, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Noda, Y, Sakai, K, Sonoda, T, Tsumagari, D, Takeda, K & Yoshitake, T 2013, Fabrication of current-perpendicular-to-plane junctions based on Fe ₃Si/FeSi₂ multilayered films by lift-off. in Magnetic Materials, Processes, and Devices 12. 10 edn, ECS Transactions, no. 10, vol. 50, Electrochemical Society Inc., pp. 223-228, 12th International Symposium on Magnetic Materials, Processes and Devices - PRiME 2012, Honolulu, HI, United States, 10/8/12. https://doi.org/10.1149/05010.0223ecst

@inproceedings{3f45421b41d0426da3353e6c140e8a82,

title = "Fabrication of current-perpendicular-to-plane junctions based on Fe 3Si/FeSi2 multilayered films by lift-off",

abstract = "Current-perpendicular-to-plane (CPP) junctions comprising Fe 3Si/FeSi2 multilayers were prepared by a lift-off process combined with lithography techniques. The Fe3Si/FeSi2 multilayered films were grown on Si (111) substrates at room temperature by facing-targets direct-current sputtering. From the X-ray diffraction measurements, it was confirmed that the Fe3Si layers were epitaxially grown from the first layer on Si (111) up to the top layer across the FeSi2 layers with the same orientation relationship as that in the first layer. The CPP junctions, wherein ferromagnetic interlayer coupling across the FeSi2 spacer layers was induced, exhibited an obvious change in the electrical resistance for the current injection, which might be due to currentinduced magnetization switching.",

author = "Y. Noda and K. Sakai and T. Sonoda and D. Tsumagari and K. Takeda and T. Yoshitake",

year = "2013",

doi = "10.1149/05010.0223ecst",

language = "English",

isbn = "9781607683582",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "223--228",

booktitle = "Magnetic Materials, Processes, and Devices 12",

edition = "10",

note = "12th International Symposium on Magnetic Materials, Processes and Devices - PRiME 2012 ; Conference date: 08-10-2012 Through 10-10-2012",

}

TY - GEN

T1 - Fabrication of current-perpendicular-to-plane junctions based on Fe 3Si/FeSi2 multilayered films by lift-off

AU - Noda, Y.

AU - Sakai, K.

AU - Sonoda, T.

AU - Tsumagari, D.

AU - Takeda, K.

AU - Yoshitake, T.

PY - 2013

Y1 - 2013

N2 - Current-perpendicular-to-plane (CPP) junctions comprising Fe 3Si/FeSi2 multilayers were prepared by a lift-off process combined with lithography techniques. The Fe3Si/FeSi2 multilayered films were grown on Si (111) substrates at room temperature by facing-targets direct-current sputtering. From the X-ray diffraction measurements, it was confirmed that the Fe3Si layers were epitaxially grown from the first layer on Si (111) up to the top layer across the FeSi2 layers with the same orientation relationship as that in the first layer. The CPP junctions, wherein ferromagnetic interlayer coupling across the FeSi2 spacer layers was induced, exhibited an obvious change in the electrical resistance for the current injection, which might be due to currentinduced magnetization switching.

AB - Current-perpendicular-to-plane (CPP) junctions comprising Fe 3Si/FeSi2 multilayers were prepared by a lift-off process combined with lithography techniques. The Fe3Si/FeSi2 multilayered films were grown on Si (111) substrates at room temperature by facing-targets direct-current sputtering. From the X-ray diffraction measurements, it was confirmed that the Fe3Si layers were epitaxially grown from the first layer on Si (111) up to the top layer across the FeSi2 layers with the same orientation relationship as that in the first layer. The CPP junctions, wherein ferromagnetic interlayer coupling across the FeSi2 spacer layers was induced, exhibited an obvious change in the electrical resistance for the current injection, which might be due to currentinduced magnetization switching.

UR - http://www.scopus.com/inward/record.url?scp=84885790087&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885790087&partnerID=8YFLogxK

U2 - 10.1149/05010.0223ecst

DO - 10.1149/05010.0223ecst

M3 - Conference contribution

AN - SCOPUS:84885790087

SN - 9781607683582

T3 - ECS Transactions

SP - 223

EP - 228

BT - Magnetic Materials, Processes, and Devices 12

PB - Electrochemical Society Inc.

T2 - 12th International Symposium on Magnetic Materials, Processes and Devices - PRiME 2012

Y2 - 8 October 2012 through 10 October 2012

ER -