Abstract
In this paper, the fabrication method and the formation mechanism of a new EBC system with Al2O3-HfO2 eutectic structure are discussed. A rapid heating process is required for the fabrication of Al2O3-HfO2 eutectic EBC film on silicon carbide substrate. Optical zone melting method was applied for the fabrication method of the eutectic EBC film. At high temperature under light focusing, a small amount of silicon carbide decomposed into silicon and carbon and each component of the Al2O3 and HfO2 in molten phase reacts with the free carbon. And a small amount of A2O3 component reacts with the free carbon and vaporized from the molten phase. The composition of the molten phase becomes HfO2 rich. HfO2 phase is also reacts with die free carbon and HfC phase is solidified on the silicon carbide substrate. A high density intermediate layer consisted of HfC is formed. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate. The Al2O3-HfO2: eutectic structure grows from the top of the intermediate layer.
| Original language | English |
|---|---|
| Title of host publication | Advanced and Refractory Ceramics for Energy Conservation and Efficiency |
| Publisher | American Ceramic Society |
| Pages | 65-72 |
| Number of pages | 8 |
| ISBN (Electronic) | 9781119234586 |
| Publication status | Published - Jan 1 2016 |
| Externally published | Yes |
| Event | Advanced and Refractory Ceramics for Energy Conservation and Efficiency - 11th International Symposium on Ceramic Materials and Components for Energy and Environmental Applications, CMCEE 2015 - Vancouver, Canada Duration: Jun 14 2015 → Jun 19 2015 |
Publication series
| Name | Ceramic Transactions |
|---|---|
| Volume | 256 |
| ISSN (Print) | 1042-1122 |
Other
| Other | Advanced and Refractory Ceramics for Energy Conservation and Efficiency - 11th International Symposium on Ceramic Materials and Components for Energy and Environmental Applications, CMCEE 2015 |
|---|---|
| Country | Canada |
| City | Vancouver |
| Period | 6/14/15 → 6/19/15 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry
Cite this
Fabrication of ebc system with oxide eutectic structure. / Ueno, Shunkichi; Seya, Kyosuke; Jang, Byungkoog.
Advanced and Refractory Ceramics for Energy Conservation and Efficiency. American Ceramic Society, 2016. p. 65-72 (Ceramic Transactions; Vol. 256).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of ebc system with oxide eutectic structure
AU - Ueno, Shunkichi
AU - Seya, Kyosuke
AU - Jang, Byungkoog
PY - 2016/1/1
Y1 - 2016/1/1
N2 - In this paper, the fabrication method and the formation mechanism of a new EBC system with Al2O3-HfO2 eutectic structure are discussed. A rapid heating process is required for the fabrication of Al2O3-HfO2 eutectic EBC film on silicon carbide substrate. Optical zone melting method was applied for the fabrication method of the eutectic EBC film. At high temperature under light focusing, a small amount of silicon carbide decomposed into silicon and carbon and each component of the Al2O3 and HfO2 in molten phase reacts with the free carbon. And a small amount of A2O3 component reacts with the free carbon and vaporized from the molten phase. The composition of the molten phase becomes HfO2 rich. HfO2 phase is also reacts with die free carbon and HfC phase is solidified on the silicon carbide substrate. A high density intermediate layer consisted of HfC is formed. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate. The Al2O3-HfO2: eutectic structure grows from the top of the intermediate layer.
AB - In this paper, the fabrication method and the formation mechanism of a new EBC system with Al2O3-HfO2 eutectic structure are discussed. A rapid heating process is required for the fabrication of Al2O3-HfO2 eutectic EBC film on silicon carbide substrate. Optical zone melting method was applied for the fabrication method of the eutectic EBC film. At high temperature under light focusing, a small amount of silicon carbide decomposed into silicon and carbon and each component of the Al2O3 and HfO2 in molten phase reacts with the free carbon. And a small amount of A2O3 component reacts with the free carbon and vaporized from the molten phase. The composition of the molten phase becomes HfO2 rich. HfO2 phase is also reacts with die free carbon and HfC phase is solidified on the silicon carbide substrate. A high density intermediate layer consisted of HfC is formed. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate. The Al2O3-HfO2: eutectic structure grows from the top of the intermediate layer.
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UR - http://www.scopus.com/inward/citedby.url?scp=84991260350&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84991260350
T3 - Ceramic Transactions
SP - 65
EP - 72
BT - Advanced and Refractory Ceramics for Energy Conservation and Efficiency
PB - American Ceramic Society
ER -