In this paper, the fabrication method and the formation mechanism of a new EBC system with Al2O3-HfO2 eutectic structure are discussed. A rapid heating process is required for the fabrication of Al2O3-HfO2 eutectic EBC film on silicon carbide substrate. Optical zone melting method was applied for the fabrication method of the eutectic EBC film. At high temperature under light focusing, a small amount of silicon carbide decomposed into silicon and carbon and each component of the Al2O3 and HfO2 in molten phase reacts with the free carbon. And a small amount of A2O3 component reacts with the free carbon and vaporized from the molten phase. The composition of the molten phase becomes HfO2 rich. HfO2 phase is also reacts with die free carbon and HfC phase is solidified on the silicon carbide substrate. A high density intermediate layer consisted of HfC is formed. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate. The Al2O3-HfO2: eutectic structure grows from the top of the intermediate layer.