Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

Tanemasa Asano, Daisuke Sasaguri

Research output: Contribution to journalArticle


Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.

Original languageEnglish
Pages (from-to)7138-7142
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Issue number12 B
Publication statusPublished - 1998
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this