Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

Tanemasa Asano, Daisuke Sasaguri

Research output: Contribution to journalArticle

Abstract

Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.

Original languageEnglish
Pages (from-to)7138-7142
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume37
Issue number12 B
Publication statusPublished - 1998
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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