Fabrication of gated carbon black field electron emitter using inkjet printing

Akiyoshi Baba; Yuji Ishida; Kazunori Hakiai; Tanemasa Asano

doi:10.1109/IVNC.2005.1619475

Fabrication of gated carbon black field electron emitter using inkjet printing

Akiyoshi Baba, Yuji Ishida, Kazunori Hakiai, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have developed a gated FEA fabrication method using by combining ink jet printing and photolithography. Using the proposed fabrication process, we demonstrated the field electron emission from the gated carbon black FEA. Surface treatment, droplet drying, and separation between the gate and carbon black are the key steps to successful fabrication of the gated FEA. This proposed method is expected to facilitate the development of a large area FED with low cost and low temperature processing. Low temperature processing characteristic has a potential application to FEDs on a plastic substrate for a flexible display.

Original language	English
Title of host publication	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Pages	42-43
Number of pages	2
Volume	2005
DOIs	https://doi.org/10.1109/IVNC.2005.1619475
Publication status	Published - 2005
Externally published	Yes
Event	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, United Kingdom Duration: Jul 10 2005 → Jul 14 2005

Other

Other	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Country	United Kingdom
City	Oxford
Period	7/10/05 → 7/14/05

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/IVNC.2005.1619475

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Baba, A, Ishida, Y, Hakiai, K & Asano, T 2005, Fabrication of gated carbon black field electron emitter using inkjet printing. in Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. vol. 2005, 1619475, pp. 42-43, Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, Oxford, United Kingdom, 7/10/05. https://doi.org/10.1109/IVNC.2005.1619475

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abstract = "We have developed a gated FEA fabrication method using by combining ink jet printing and photolithography. Using the proposed fabrication process, we demonstrated the field electron emission from the gated carbon black FEA. Surface treatment, droplet drying, and separation between the gate and carbon black are the key steps to successful fabrication of the gated FEA. This proposed method is expected to facilitate the development of a large area FED with low cost and low temperature processing. Low temperature processing characteristic has a potential application to FEDs on a plastic substrate for a flexible display.",

author = "Akiyoshi Baba and Yuji Ishida and Kazunori Hakiai and Tanemasa Asano",

year = "2005",

doi = "10.1109/IVNC.2005.1619475",

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volume = "2005",

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booktitle = "Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005",

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AU - Ishida, Yuji

AU - Hakiai, Kazunori

AU - Asano, Tanemasa

PY - 2005

Y1 - 2005

N2 - We have developed a gated FEA fabrication method using by combining ink jet printing and photolithography. Using the proposed fabrication process, we demonstrated the field electron emission from the gated carbon black FEA. Surface treatment, droplet drying, and separation between the gate and carbon black are the key steps to successful fabrication of the gated FEA. This proposed method is expected to facilitate the development of a large area FED with low cost and low temperature processing. Low temperature processing characteristic has a potential application to FEDs on a plastic substrate for a flexible display.

AB - We have developed a gated FEA fabrication method using by combining ink jet printing and photolithography. Using the proposed fabrication process, we demonstrated the field electron emission from the gated carbon black FEA. Surface treatment, droplet drying, and separation between the gate and carbon black are the key steps to successful fabrication of the gated FEA. This proposed method is expected to facilitate the development of a large area FED with low cost and low temperature processing. Low temperature processing characteristic has a potential application to FEDs on a plastic substrate for a flexible display.

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SP - 42

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BT - Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005

T2 - Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005

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