Abstract
We have developed a gated FEA fabrication method using by combining ink jet printing and photolithography. Using the proposed fabrication process, we demonstrated the field electron emission from the gated carbon black FEA. Surface treatment, droplet drying, and separation between the gate and carbon black are the key steps to successful fabrication of the gated FEA. This proposed method is expected to facilitate the development of a large area FED with low cost and low temperature processing. Low temperature processing characteristic has a potential application to FEDs on a plastic substrate for a flexible display.
Original language | English |
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Title of host publication | Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 |
Pages | 42-43 |
Number of pages | 2 |
Volume | 2005 |
DOIs | |
Publication status | Published - 2005 |
Externally published | Yes |
Event | Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, United Kingdom Duration: Jul 10 2005 → Jul 14 2005 |
Other
Other | Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 |
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Country | United Kingdom |
City | Oxford |
Period | 7/10/05 → 7/14/05 |
All Science Journal Classification (ASJC) codes
- Engineering(all)