Fabrication of gated carbon black field electron emitter using inkjet printing

Akiyoshi Baba, Yuji Ishida, Kazunori Hakiai, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have developed a gated FEA fabrication method using by combining ink jet printing and photolithography. Using the proposed fabrication process, we demonstrated the field electron emission from the gated carbon black FEA. Surface treatment, droplet drying, and separation between the gate and carbon black are the key steps to successful fabrication of the gated FEA. This proposed method is expected to facilitate the development of a large area FED with low cost and low temperature processing. Low temperature processing characteristic has a potential application to FEDs on a plastic substrate for a flexible display.

Original languageEnglish
Title of host publicationTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Pages42-43
Number of pages2
Volume2005
DOIs
Publication statusPublished - 2005
Externally publishedYes
EventTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, United Kingdom
Duration: Jul 10 2005Jul 14 2005

Other

OtherTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
CountryUnited Kingdom
CityOxford
Period7/10/057/14/05

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Baba, A., Ishida, Y., Hakiai, K., & Asano, T. (2005). Fabrication of gated carbon black field electron emitter using inkjet printing. In Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 (Vol. 2005, pp. 42-43). [1619475] https://doi.org/10.1109/IVNC.2005.1619475