Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment

Tomoya Yoshida, Akiyoshi Baba, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Pages38-39
Number of pages2
DOIs
Publication statusPublished - Dec 1 2005
EventTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, United Kingdom
Duration: Jul 10 2005Jul 14 2005

Publication series

NameTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Volume2005

Other

OtherTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
CountryUnited Kingdom
CityOxford
Period7/10/057/14/05

Fingerprint

Ion beams
Cathodes
Fabrication
Thin films

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yoshida, T., Baba, A., & Asano, T. (2005). Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment. In Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 (pp. 38-39). [1619473] (Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005; Vol. 2005). https://doi.org/10.1109/IVNC.2005.1619473

Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment. / Yoshida, Tomoya; Baba, Akiyoshi; Asano, Tanemasa.

Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. 2005. p. 38-39 1619473 (Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoshida, T, Baba, A & Asano, T 2005, Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment. in Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005., 1619473, Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, vol. 2005, pp. 38-39, Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, Oxford, United Kingdom, 7/10/05. https://doi.org/10.1109/IVNC.2005.1619473
Yoshida T, Baba A, Asano T. Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment. In Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. 2005. p. 38-39. 1619473. (Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005). https://doi.org/10.1109/IVNC.2005.1619473
Yoshida, Tomoya ; Baba, Akiyoshi ; Asano, Tanemasa. / Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment. Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. 2005. pp. 38-39 (Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005).
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