Fabrication of gated field emitter from wedge array prepared by stamp technology

Akiyoshi Baba, Kouichi Tsubaki, Masakazu Iwamoto, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ion-beam modified polyimide is very attractive material for use in field emitters because it can emit electrons at relatively low electric fields with a stable emission rate. The use of organic material as the starting material makes it possible to prepare emitter arrays using the stamp technology. The stamp technology is able to prepare uniform emitter arrays with high geometrical accuracy. In the previous study, a long wedge-type emitter array has been fabricated using the stamp technology. In order to increase emission current density and decrease operating voltage, it highly required to shorten the length of the wedge and to fabricate gated device structure. In this work, we demonstrate successful preparation of short-wedge emitter arrays using a modified stamp process. Fabrication of the gated field emitter arrays from the short-wedge emitters is also demonstrated.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages128-129
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
Publication statusPublished - 2000
Externally publishedYes
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: Jul 11 2000Jul 13 2000

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2000
CountryJapan
CityTokyo
Period7/11/007/13/00

Fingerprint

Technology
Fabrication
Polyimides
Ion beams
Current density
Electric fields
Electrons
Ions
Equipment and Supplies
Electric potential

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Baba, A., Tsubaki, K., Iwamoto, M., & Asano, T. (2000). Fabrication of gated field emitter from wedge array prepared by stamp technology. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 128-129). [872655] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872655

Fabrication of gated field emitter from wedge array prepared by stamp technology. / Baba, Akiyoshi; Tsubaki, Kouichi; Iwamoto, Masakazu; Asano, Tanemasa.

Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 128-129 872655.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Baba, A, Tsubaki, K, Iwamoto, M & Asano, T 2000, Fabrication of gated field emitter from wedge array prepared by stamp technology. in Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000., 872655, Institute of Electrical and Electronics Engineers Inc., pp. 128-129, International Microprocesses and Nanotechnology Conference, MNC 2000, Tokyo, Japan, 7/11/00. https://doi.org/10.1109/IMNC.2000.872655
Baba A, Tsubaki K, Iwamoto M, Asano T. Fabrication of gated field emitter from wedge array prepared by stamp technology. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 128-129. 872655 https://doi.org/10.1109/IMNC.2000.872655
Baba, Akiyoshi ; Tsubaki, Kouichi ; Iwamoto, Masakazu ; Asano, Tanemasa. / Fabrication of gated field emitter from wedge array prepared by stamp technology. Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 128-129
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