Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of al

Kana Hirayama, Ryuji Ueno, Yoshiaki Iwamura, Keisuke Yoshino, Dong Wang, Haigui Yang, Hiroshi Nakashima

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23 Citations (Scopus)

Abstract

A novel method of electrical passivation of a Ge surface by an ultrathin SiO2/GeO2 bilayer is proposed as an effective method for fabricating metal-oxide-semiconductor (MOS) structures, which can be processed through the thermal etching of GeO2 by vacuum annealing and subsequent SiO2 deposition. We demonstrated the feasibility of this passivation technique by performing interface state density (Dit) measurements of MOS capacitors, which were fabricated using several surface preparations and subsequent gate insulating film deposition. A Dit of 4×1011 cm-2 eV-1 was obtained at around midgap. We also investigated the effect of postmetallization annealing after Al deposition (Al-PMA). Al-PMA was found to be very effective for decreasing Dit, which was 9:4×1010 cm-2 eV-1 at around midgap for a capacitor with PMA at 400 °C. The role of Al as a defect terminator was discussed.

Original languageEnglish
Article number04DA10
JournalJapanese journal of applied physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - Apr 2011

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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