Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-Thin SiO<sub>2</sub>/GeO<sub>2</sub> Bi-Layer Passivation

K. Hirayama, R. Ueno, Y. Iwamura, K. Yoshino, D. Wang, H. Yang, H. Nakashima

Research output: Contribution to conferencePaperpeer-review

Original languageEnglish
Pages205-206
Number of pages2
DOIs
Publication statusPublished - Sep 23 2010
Event2010 International Conference on Solid State Devices and Materials (SSDM2010) - The University of Tokyo, Tokyo, Japan
Duration: Sep 21 2010Sep 24 2010

Conference

Conference2010 International Conference on Solid State Devices and Materials (SSDM2010)
Country/TerritoryJapan
CityTokyo
Period9/21/109/24/10

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