Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

Kana Hirayama, Keisuke Yoshino, Ryuji Ueno, Yoshiaki Iwamura, Haigui Yang, Dong Wang, Hiroshi Nakashima

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