Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon

Abdelrahman Zkria, Hiroki Gima, Sausan Al-Riyami, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition (CAPD). Nitrogen-doped films with nitrogen contents of 3 and 8 at.% possessed n-type conduction. The electrical conductivity increased with increasing nitrogen content. Heterojunction diodes with p-type Si exhibited typical rectifying action. From the capacitance-voltage measurement, it was confirmed that the carrier density increases with the nitrogen content. copy; 2015 Materials Research Society.

    Original languageEnglish
    Title of host publicationDiamond Electronics and Biotechnology - Fundamentals to Applications
    EditorsD. A. J. Moran, G. M. Swain, C.-L. Cheng, R. J. Nemanich
    PublisherMaterials Research Society
    Pages46-51
    Number of pages6
    ISBN (Electronic)9781510806153
    DOIs
    Publication statusPublished - 2015
    Event2014 MRS Fall Meeting - Boston, United States
    Duration: Nov 30 2014Dec 5 2014

    Publication series

    NameMaterials Research Society Symposium Proceedings
    Volume1734
    ISSN (Print)0272-9172

    Other

    Other2014 MRS Fall Meeting
    CountryUnited States
    CityBoston
    Period11/30/1412/5/14

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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