Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure

Hiroshi Nakashima, Youhei Sugimoto, Yuusaku Suehiro, Keisuke Yamamoto, Masanari Kajiwara, Kana Hirayama, Dong Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

High-permittivity (high-k) dielectrics with HfO2/Hf xSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xO2y) could be successfully achieved, which shows interface state density of 1 × 1011 eV-1cm-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO2 with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages780-783
Number of pages4
DOIs
Publication statusPublished - Dec 1 2008
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: Oct 20 2008Oct 23 2008

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period10/20/0810/23/08

Fingerprint

Gate dielectrics
Oxides
Annealing
Plasmas
Fabrication
Oxidation
oxidation
fabrication
annealing
oxides
Interface states
Leakage currents
Structural properties
Electric properties
Permittivity
Current density
X ray photoelectron spectroscopy
Transmission electron microscopy
Kinetics
leakage

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K., & Wang, D. (2008). Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 780-783). [4734660] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734660

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure. / Nakashima, Hiroshi; Sugimoto, Youhei; Suehiro, Yuusaku; Yamamoto, Keisuke; Kajiwara, Masanari; Hirayama, Kana; Wang, Dong.

ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 780-783 4734660 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakashima, H, Sugimoto, Y, Suehiro, Y, Yamamoto, K, Kajiwara, M, Hirayama, K & Wang, D 2008, Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734660, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 780-783, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 10/20/08. https://doi.org/10.1109/ICSICT.2008.4734660
Nakashima H, Sugimoto Y, Suehiro Y, Yamamoto K, Kajiwara M, Hirayama K et al. Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 780-783. 4734660. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734660
Nakashima, Hiroshi ; Sugimoto, Youhei ; Suehiro, Yuusaku ; Yamamoto, Keisuke ; Kajiwara, Masanari ; Hirayama, Kana ; Wang, Dong. / Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 780-783 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).
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AU - Sugimoto, Youhei

AU - Suehiro, Yuusaku

AU - Yamamoto, Keisuke

AU - Kajiwara, Masanari

AU - Hirayama, Kana

AU - Wang, Dong

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N2 - High-permittivity (high-k) dielectrics with HfO2/Hf xSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xO2y) could be successfully achieved, which shows interface state density of 1 × 1011 eV-1cm-2, effective oxide thickness (EOT) of 1.2 nm, and 4 orders decrease of leakage current density relative to SiO2 with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900°C is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.

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