Fabrication of InP/SiC structure using surface activated direct bonding

Y. Fan, T. Maekawa, K. Watanabe, R. Takigawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Bonding of Indium phosphide (InP)-based electronic device and Silicon Carbide (SiC) heat spreader is beneficial to thermal management. In this study, InP/SiC structure was demonstrated using surface activated direct bonding at room temperature. The bond quality was evaluated by dicing testing and tensile testing.

Original languageEnglish
Title of host publication2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages46
Number of pages1
ISBN (Electronic)9781665405676
DOIs
Publication statusPublished - Oct 5 2021
Event7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan
Duration: Oct 5 2021Oct 11 2021

Publication series

Name2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/TerritoryJapan
CityVirtual, Online
Period10/5/2110/11/21

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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