Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes

M. Kawakita, K. Okabe, S. Yakata, Takashi Kimura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Resistive switching device consisting of metallic oxide layer sandwiched by the metallic electrodes has paid considerable attention to next-generation nano-electronic devices. Two major mechanisms; filament-type and interface-type, are known for the transition between the low-resistive and high-resistive states. In both mechanism, the low voltage operation is the common issue for the reliable and low-power consumption operations. From this view point, the devices, in general, consist of vertical stuck structure with the thin oxide layer. If one obtains the resistive switching operation in the laterally configured structure, we may obtain more flexible and functional device. It also should be noted that most of the metallic oxides showing the resistive switching include magnetic components1∼3). This implies that the resistance switching is related to the spin configuration in the metallic oxide. For these purpose, in the present study, we develop a novel method for the fabrication of the switching devices in lateral configuration and investigate the influence of the ferromagnetic electrode and spin orientation on the switching property.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - Jan 1 2015
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: May 11 2015May 15 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period5/11/155/15/15

Fingerprint

Fabrication
Oxides
Electrodes
Nanoelectronics
Electric power utilization
Electric potential

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kawakita, M., Okabe, K., Yakata, S., & Kimura, T. (2015). Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7156918] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7156918

Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. / Kawakita, M.; Okabe, K.; Yakata, S.; Kimura, Takashi.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7156918.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kawakita, M, Okabe, K, Yakata, S & Kimura, T 2015, Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7156918, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 5/11/15. https://doi.org/10.1109/INTMAG.2015.7156918
Kawakita M, Okabe K, Yakata S, Kimura T. Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. In 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7156918 https://doi.org/10.1109/INTMAG.2015.7156918
Kawakita, M. ; Okabe, K. ; Yakata, S. ; Kimura, Takashi. / Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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