Fabrication of mesa structural n-type nanocrystalline-FeSi2/p-type Si heterojunction photodiodes by liftoff technique combined with photolithography

Suguru Funasaki, Nathaporn Promros, Ryuhei Iwasaki, Motoki Takahara, Mahmoud Shaban, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    Mesa structural n-type nanocrystalline (NC) FeSi2/p-type Si heterojunctions were fabricated by a liftoff technique combined with photolithography in order to improve the diode performance, particularly to reduce the parasitic capacitance. Their current-voltage characteristics were experimentally studied in the dark and under illumination using a 1.31 μm laser at room temperature. Their junction capacitance density and leakage current density were evidently reduced as compared with those of the normal structural diodes. The mesa diode exhibits a good rectifying action with a rectification ratio of approximately three orders of magnitude at bias voltages of ±1 V. The photodetection was clearly observed owing to the suppression in the dark current. The estimated detectivity is 2.0 × 109 cm√Hz/W at zero bias, which is an order of magnitude larger than that of the normal structural diodes. This should be because the formation of interface states is reduced accompanied by the interface area reduction.

    Original languageEnglish
    Pages (from-to)1785-1788
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume10
    Issue number12
    DOIs
    Publication statusPublished - Dec 1 2013

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    mesas
    photolithography
    photodiodes
    heterojunctions
    diodes
    fabrication
    capacitance
    electric potential
    rectification
    dark current
    leakage
    illumination
    retarding
    current density
    room temperature
    lasers

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics

    Cite this

    Fabrication of mesa structural n-type nanocrystalline-FeSi2/p-type Si heterojunction photodiodes by liftoff technique combined with photolithography. / Funasaki, Suguru; Promros, Nathaporn; Iwasaki, Ryuhei; Takahara, Motoki; Shaban, Mahmoud; Yoshitake, Tsuyoshi.

    In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 10, No. 12, 01.12.2013, p. 1785-1788.

    Research output: Contribution to journalArticle

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    abstract = "Mesa structural n-type nanocrystalline (NC) FeSi2/p-type Si heterojunctions were fabricated by a liftoff technique combined with photolithography in order to improve the diode performance, particularly to reduce the parasitic capacitance. Their current-voltage characteristics were experimentally studied in the dark and under illumination using a 1.31 μm laser at room temperature. Their junction capacitance density and leakage current density were evidently reduced as compared with those of the normal structural diodes. The mesa diode exhibits a good rectifying action with a rectification ratio of approximately three orders of magnitude at bias voltages of ±1 V. The photodetection was clearly observed owing to the suppression in the dark current. The estimated detectivity is 2.0 × 109 cm√Hz/W at zero bias, which is an order of magnitude larger than that of the normal structural diodes. This should be because the formation of interface states is reduced accompanied by the interface area reduction.",
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    AU - Promros, Nathaporn

    AU - Iwasaki, Ryuhei

    AU - Takahara, Motoki

    AU - Shaban, Mahmoud

    AU - Yoshitake, Tsuyoshi

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