Fabrication of mesa-type pn diodes without forward degradation on ultara-high-quality 6H-SiC substrate

Y. Tanaka, T. Ohno, N. Oyanagi, Shinichi Nishizawa, T. Suzuki, K. Fukuda, T. Yatsuo, K. Arai

Research output: Contribution to journalConference article

Abstract

Using our own substrate growth and epitaxial growth techniques, we fabricated a 1.4 kV mesa-type 6H-SiC pn diode with an ideal avalanche breakdown and without forward degradation. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. A pn junction was fabricated by chemical vapor deposition (CVD) with p + /n epitaxial films. We obtained 1.4 kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness (10μm) and doping concentration (2×10 16 cm -3 ) of the drift layer. The application of 200 A/cm 2 current stress in the forward direction produced no degradation, which is often observed with pn diodes on normal commercial substrates.

Original languageEnglish
Pages (from-to)1009-1012
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberII
Publication statusPublished - Nov 29 2004
Externally publishedYes
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Tanaka, Y., Ohno, T., Oyanagi, N., Nishizawa, S., Suzuki, T., Fukuda, K., ... Arai, K. (2004). Fabrication of mesa-type pn diodes without forward degradation on ultara-high-quality 6H-SiC substrate. Materials Science Forum, 457-460(II), 1009-1012.