Fabrication of micro field emitter tip using ion-beam irradiation-induced self-standing of thin film

Tomoya Yoshida, Akiyoshi Baba, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The fabrication of the self-standing field emitter tip and its field emission characteristics were investigated. WSiO2 was used as the emitter material, and the film was deposited by RF magnetron sputtering on SiO2 substrate. The scanning electron microscope (SEM) image of the standing WSiO2 shows that the films bends up at the end where the SiO2 under the WSi2 film was removed. It was observed that the tensile stress in the deposited WSi2 film on the SiO2 film is relaxed near the top surface of the WSi2 film due to the ion bombardment.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Pages328-329
Number of pages2
Publication statusPublished - Dec 1 2004
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: Oct 26 2004Oct 29 2004

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period10/26/0410/29/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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