Fabrication of Microstructured Magnetic Tunneling Valve Junction

K. Matsuyama; H. Asada; H. Miyoshi; K. Taniguchi

doi:10.1109/20.490319

Fabrication of Microstructured Magnetic Tunneling Valve Junction

K. Matsuyama, H. Asada, H. Miyoshi, K. Taniguchi

Electronic Devices

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A microstructured magnetic tunneling valve junction was fabricated with a photolithographic technique. The base and counter electrodes of 78NI-Fe and Co were deposited by conventional rf sputtering. The rf sputter oxidation was applied to form the tunneling barrier on the intermediate Al surface; typical sputtering parameters used in the experiments were rf power of 0.4 w/cm² and oxygen pressure of 50 mTorr. The magnetoresistance ratio of 0.2% (resistance R = 4.1 Ω, ΔR = 8 mΩ) was observed at room temperature in the microstructured 40 × 40 µm2 junction.

Original language	English
Pages (from-to)	3176-3178
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/20.490319
Publication status	Published - Nov 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Fabrication of Microstructured Magnetic Tunneling Valve Junction",

abstract = "A microstructured magnetic tunneling valve junction was fabricated with a photolithographic technique. The base and counter electrodes of 78NI-Fe and Co were deposited by conventional rf sputtering. The rf sputter oxidation was applied to form the tunneling barrier on the intermediate Al surface; typical sputtering parameters used in the experiments were rf power of 0.4 w/cm2 and oxygen pressure of 50 mTorr. The magnetoresistance ratio of 0.2% (resistance R = 4.1 Ω, ΔR = 8 mΩ) was observed at room temperature in the microstructured 40 × 40 µm2 junction.",

author = "K. Matsuyama and H. Asada and H. Miyoshi and K. Taniguchi",

year = "1995",

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doi = "10.1109/20.490319",

language = "English",

volume = "31",

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journal = "IEEE Transactions on Magnetics",

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T1 - Fabrication of Microstructured Magnetic Tunneling Valve Junction

AU - Matsuyama, K.

AU - Asada, H.

AU - Miyoshi, H.

AU - Taniguchi, K.

PY - 1995/11

Y1 - 1995/11

N2 - A microstructured magnetic tunneling valve junction was fabricated with a photolithographic technique. The base and counter electrodes of 78NI-Fe and Co were deposited by conventional rf sputtering. The rf sputter oxidation was applied to form the tunneling barrier on the intermediate Al surface; typical sputtering parameters used in the experiments were rf power of 0.4 w/cm2 and oxygen pressure of 50 mTorr. The magnetoresistance ratio of 0.2% (resistance R = 4.1 Ω, ΔR = 8 mΩ) was observed at room temperature in the microstructured 40 × 40 µm2 junction.

AB - A microstructured magnetic tunneling valve junction was fabricated with a photolithographic technique. The base and counter electrodes of 78NI-Fe and Co were deposited by conventional rf sputtering. The rf sputter oxidation was applied to form the tunneling barrier on the intermediate Al surface; typical sputtering parameters used in the experiments were rf power of 0.4 w/cm2 and oxygen pressure of 50 mTorr. The magnetoresistance ratio of 0.2% (resistance R = 4.1 Ω, ΔR = 8 mΩ) was observed at room temperature in the microstructured 40 × 40 µm2 junction.

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

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ER -

Fabrication of Microstructured Magnetic Tunneling Valve Junction

Abstract

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