A microstructured magnetic tunneling valve junction was fabricated with a photolithographic technique. The base and counter electrodes of 78NI-Fe and Co were deposited by conventional rf sputtering. The rf sputter oxidation was applied to form the tunneling barrier on the intermediate Al surface; typical sputtering parameters used in the experiments were rf power of 0.4 w/cm2 and oxygen pressure of 50 mTorr. The magnetoresistance ratio of 0.2% (resistance R = 4.1 Ω, ΔR = 8 mΩ) was observed at room temperature in the microstructured 40 × 40 µm2 junction.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering