Fabrication Of Mosfets In Si/CaF2/Si Heteroepitaxial Structures

T. Asano, Y. Kuriyama, H. Ishiwara

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Aluminium-gate n-channel MOSFETs have been fabricated in Si/CaF2/Si heteroepitaxial silicon-on-insulator structures. The MOSFETs were fabricated by a process including thermal oxidation in wet oxygen ambient for the formation of the gate oxide. The maximum field-effect electron mobility as high as 580 cm2/V s was obtained.

Original languageEnglish
Pages (from-to)386-387
Number of pages2
JournalElectronics Letters
Volume21
Issue number9
DOIs
Publication statusPublished - Jan 1 1985

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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