Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes

Chen Li, Wataru Yokoyama, Shota Izumi, Promros Nathaporn, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    n-Type β-FeSi2 thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600 °C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi2/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.

    Original languageEnglish
    Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
    Pages2225-2227
    Number of pages3
    DOIs
    Publication statusPublished - Dec 1 2010
    Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
    Duration: Nov 21 2010Nov 24 2010

    Publication series

    NameIEEE Region 10 Annual International Conference, Proceedings/TENCON

    Other

    Other2010 IEEE Region 10 Conference, TENCON 2010
    CountryJapan
    CityFukuoka
    Period11/21/1011/24/10

    Fingerprint

    Pulsed laser deposition
    Photodiodes
    Heterojunctions
    Fabrication
    Substrates
    Irradiation
    X ray diffraction
    Thin films
    Temperature

    All Science Journal Classification (ASJC) codes

    • Computer Science Applications
    • Electrical and Electronic Engineering

    Cite this

    Li, C., Yokoyama, W., Izumi, S., Nathaporn, P., & Yoshitake, T. (2010). Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 2225-2227). [5686670] (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2010.5686670

    Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes. / Li, Chen; Yokoyama, Wataru; Izumi, Shota; Nathaporn, Promros; Yoshitake, Tsuyoshi.

    TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 2225-2227 5686670 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Li, C, Yokoyama, W, Izumi, S, Nathaporn, P & Yoshitake, T 2010, Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes. in TENCON 2010 - 2010 IEEE Region 10 Conference., 5686670, IEEE Region 10 Annual International Conference, Proceedings/TENCON, pp. 2225-2227, 2010 IEEE Region 10 Conference, TENCON 2010, Fukuoka, Japan, 11/21/10. https://doi.org/10.1109/TENCON.2010.5686670
    Li C, Yokoyama W, Izumi S, Nathaporn P, Yoshitake T. Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes. In TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 2225-2227. 5686670. (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2010.5686670
    Li, Chen ; Yokoyama, Wataru ; Izumi, Shota ; Nathaporn, Promros ; Yoshitake, Tsuyoshi. / Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes. TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. pp. 2225-2227 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).
    @inproceedings{82995ba777874e7caa2abedfc687e769,
    title = "Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes",
    abstract = "n-Type β-FeSi2 thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600 °C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi2/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.",
    author = "Chen Li and Wataru Yokoyama and Shota Izumi and Promros Nathaporn and Tsuyoshi Yoshitake",
    year = "2010",
    month = "12",
    day = "1",
    doi = "10.1109/TENCON.2010.5686670",
    language = "English",
    isbn = "9781424468904",
    series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",
    pages = "2225--2227",
    booktitle = "TENCON 2010 - 2010 IEEE Region 10 Conference",

    }

    TY - GEN

    T1 - Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes

    AU - Li, Chen

    AU - Yokoyama, Wataru

    AU - Izumi, Shota

    AU - Nathaporn, Promros

    AU - Yoshitake, Tsuyoshi

    PY - 2010/12/1

    Y1 - 2010/12/1

    N2 - n-Type β-FeSi2 thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600 °C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi2/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.

    AB - n-Type β-FeSi2 thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600 °C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi2/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.

    UR - http://www.scopus.com/inward/record.url?scp=79951645654&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=79951645654&partnerID=8YFLogxK

    U2 - 10.1109/TENCON.2010.5686670

    DO - 10.1109/TENCON.2010.5686670

    M3 - Conference contribution

    AN - SCOPUS:79951645654

    SN - 9781424468904

    T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

    SP - 2225

    EP - 2227

    BT - TENCON 2010 - 2010 IEEE Region 10 Conference

    ER -