Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes

Chen Li, Wataru Yokoyama, Shota Izumi, Promros Nathaporn, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    n-Type β-FeSi2 thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600 °C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi2/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.

    Original languageEnglish
    Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
    Pages2225-2227
    Number of pages3
    DOIs
    Publication statusPublished - Dec 1 2010
    Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
    Duration: Nov 21 2010Nov 24 2010

    Publication series

    NameIEEE Region 10 Annual International Conference, Proceedings/TENCON

    Other

    Other2010 IEEE Region 10 Conference, TENCON 2010
    CountryJapan
    CityFukuoka
    Period11/21/1011/24/10

    All Science Journal Classification (ASJC) codes

    • Computer Science Applications
    • Electrical and Electronic Engineering

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    Li, C., Yokoyama, W., Izumi, S., Nathaporn, P., & Yoshitake, T. (2010). Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 2225-2227). [5686670] (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2010.5686670