Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions

Masaki Goto, Akira Koga, Kazuhiro Yamada, Yoshimine Kato, Kungen Tsutsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200°C in 2%CH4/98%H2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830°C in 1%CH 4/30%N2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (∼20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2010
Pages524-527
Number of pages4
DOIs
Publication statusPublished - Apr 28 2011
Event8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 - Oslo, Norway
Duration: Aug 29 2010Sep 2 2010

Publication series

NameMaterials Science Forum
Volume679-680
ISSN (Print)0255-5476

Other

Other8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010
CountryNorway
CityOslo
Period8/29/109/2/10

Fingerprint

Diamond
Diamonds
diamonds
Fabrication
fabrication
Plasmas
carbonization
Carbonization
Current voltage characteristics
Plasma enhanced chemical vapor deposition
Etching
Diodes
diodes
Microwaves
etching
vapor deposition
methylidyne
Transmission electron microscopy
microwaves
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Goto, M., Koga, A., Yamada, K., Kato, Y., & Tsutsui, K. (2011). Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions. In Silicon Carbide and Related Materials 2010 (pp. 524-527). (Materials Science Forum; Vol. 679-680). https://doi.org/10.4028/www.scientific.net/MSF.679-680.524

Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions. / Goto, Masaki; Koga, Akira; Yamada, Kazuhiro; Kato, Yoshimine; Tsutsui, Kungen.

Silicon Carbide and Related Materials 2010. 2011. p. 524-527 (Materials Science Forum; Vol. 679-680).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Goto, M, Koga, A, Yamada, K, Kato, Y & Tsutsui, K 2011, Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions. in Silicon Carbide and Related Materials 2010. Materials Science Forum, vol. 679-680, pp. 524-527, 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010, Oslo, Norway, 8/29/10. https://doi.org/10.4028/www.scientific.net/MSF.679-680.524
Goto M, Koga A, Yamada K, Kato Y, Tsutsui K. Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions. In Silicon Carbide and Related Materials 2010. 2011. p. 524-527. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.679-680.524
Goto, Masaki ; Koga, Akira ; Yamada, Kazuhiro ; Kato, Yoshimine ; Tsutsui, Kungen. / Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions. Silicon Carbide and Related Materials 2010. 2011. pp. 524-527 (Materials Science Forum).
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