Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions

Masaki Goto, Akira Koga, Kazuhiro Yamada, Yoshimine Kato, Kungen Teii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200°C in 2%CH4/98%H2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830°C in 1%CH 4/30%N2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (∼20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2010
EditorsEdouard V. Monakhov, Tamas Hornos, Bengt G. Svensson
PublisherTrans Tech Publications Ltd
Pages524-527
Number of pages4
ISBN (Print)9783037850794
DOIs
Publication statusPublished - 2011

Publication series

NameMaterials Science Forum
Volume679-680
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Goto, M., Koga, A., Yamada, K., Kato, Y., & Teii, K. (2011). Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions. In E. V. Monakhov, T. Hornos, & B. G. Svensson (Eds.), Silicon Carbide and Related Materials 2010 (pp. 524-527). (Materials Science Forum; Vol. 679-680). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.679-680.524