Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: Nanopore density control

Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using CH3SiH3 pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of ∼10 nm were obtained after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities of the pits and the nanopores strongly depend on the initial SiC nucleation density which can be controlled by the pulse frequency and number of CH3SiH3 pulse jets.

Original languageEnglish
Title of host publicationSeventh International Conference on Thin Film Physics and Applications
DOIs
Publication statusPublished - Mar 30 2011
Event7th International Conference on Thin Film Physics and Applications - Shanghai, China
Duration: Sep 24 2010Sep 27 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7995
ISSN (Print)0277-786X

Other

Other7th International Conference on Thin Film Physics and Applications
CountryChina
CityShanghai
Period9/24/109/27/10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Yahaya, H., Ikoma, Y., Kuriyama, K., & Motooka, T. (2011). Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: Nanopore density control. In Seventh International Conference on Thin Film Physics and Applications [799520] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7995). https://doi.org/10.1117/12.888388