Fabrication of p- And n-type field-effect transistors using poly(p-phenylenevinylene) via water-soluble precursor under high-gravity condition

Poly(p-phenylenevinylene) (PPV) thin films were prepared from a water-soluble precursor polymer by drop casting under a high-gravity condition on a doped silicon substrate with octadecyltrichlorosilane-treated SiO ₂ insulating layer. Dewetting of a polymer solution from a hydrophobic substrate was effectively prevented by preparing PPV thin films under a high-gravity condition, and high-quality PPV thin films were obtained. By choosing the appropriate source-drain metal electrodes, Au source-drain electrodes with inserted V₂O₅ buffer layer and Ca source-drain electrodes, p- and n-type PPV field-effect transistors with top contact geometries were fabricated. The field-effect hole and electron mobility estimated from the saturation region were 3.2 × 10^-4 and 1.0 × 10^-6cm²v^-1s^-1, respectively.