TY - JOUR
T1 - Fabrication of p- And n-type field-effect transistors using poly(p-phenylenevinylene) via water-soluble precursor under high-gravity condition
AU - Kayashima, Hiroshi
AU - Yasuda, Takeshi
AU - Fujita, Katsuhiko
AU - Tsutsui, Tetsuo
PY - 2007/3/9
Y1 - 2007/3/9
N2 - Poly(p-phenylenevinylene) (PPV) thin films were prepared from a water-soluble precursor polymer by drop casting under a high-gravity condition on a doped silicon substrate with octadecyltrichlorosilane-treated SiO 2 insulating layer. Dewetting of a polymer solution from a hydrophobic substrate was effectively prevented by preparing PPV thin films under a high-gravity condition, and high-quality PPV thin films were obtained. By choosing the appropriate source-drain metal electrodes, Au source-drain electrodes with inserted V2O5 buffer layer and Ca source-drain electrodes, p- and n-type PPV field-effect transistors with top contact geometries were fabricated. The field-effect hole and electron mobility estimated from the saturation region were 3.2 × 10-4 and 1.0 × 10-6cm2v-1s-1, respectively.
AB - Poly(p-phenylenevinylene) (PPV) thin films were prepared from a water-soluble precursor polymer by drop casting under a high-gravity condition on a doped silicon substrate with octadecyltrichlorosilane-treated SiO 2 insulating layer. Dewetting of a polymer solution from a hydrophobic substrate was effectively prevented by preparing PPV thin films under a high-gravity condition, and high-quality PPV thin films were obtained. By choosing the appropriate source-drain metal electrodes, Au source-drain electrodes with inserted V2O5 buffer layer and Ca source-drain electrodes, p- and n-type PPV field-effect transistors with top contact geometries were fabricated. The field-effect hole and electron mobility estimated from the saturation region were 3.2 × 10-4 and 1.0 × 10-6cm2v-1s-1, respectively.
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U2 - 10.1143/JJAP.46.L177
DO - 10.1143/JJAP.46.L177
M3 - Article
AN - SCOPUS:34547909614
VL - 46
SP - L177-L179
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
SN - 0021-4922
IS - 8-11
ER -