Fabrication of p- And n-type field-effect transistors using poly(p-phenylenevinylene) via water-soluble precursor under high-gravity condition

Hiroshi Kayashima, Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Poly(p-phenylenevinylene) (PPV) thin films were prepared from a water-soluble precursor polymer by drop casting under a high-gravity condition on a doped silicon substrate with octadecyltrichlorosilane-treated SiO 2 insulating layer. Dewetting of a polymer solution from a hydrophobic substrate was effectively prevented by preparing PPV thin films under a high-gravity condition, and high-quality PPV thin films were obtained. By choosing the appropriate source-drain metal electrodes, Au source-drain electrodes with inserted V2O5 buffer layer and Ca source-drain electrodes, p- and n-type PPV field-effect transistors with top contact geometries were fabricated. The field-effect hole and electron mobility estimated from the saturation region were 3.2 × 10-4 and 1.0 × 10-6cm2v-1s-1, respectively.

Original languageEnglish
Pages (from-to)L177-L179
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number8-11
DOIs
Publication statusPublished - Mar 9 2007

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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