Poly(p-phenylenevinylene) (PPV) thin films were prepared from a water-soluble precursor polymer by drop casting under a high-gravity condition on a doped silicon substrate with octadecyltrichlorosilane-treated SiO 2 insulating layer. Dewetting of a polymer solution from a hydrophobic substrate was effectively prevented by preparing PPV thin films under a high-gravity condition, and high-quality PPV thin films were obtained. By choosing the appropriate source-drain metal electrodes, Au source-drain electrodes with inserted V2O5 buffer layer and Ca source-drain electrodes, p- and n-type PPV field-effect transistors with top contact geometries were fabricated. The field-effect hole and electron mobility estimated from the saturation region were 3.2 × 10-4 and 1.0 × 10-6cm2v-1s-1, respectively.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - Mar 9 2007|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)