Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering

Koichi Matsushima; Ryota Shimizu; Tomoaki Ide; Daisuke Yamashita; Hyunwoong Seo; Kazunori Koga; Masaharu Shiratani; Naho Itagaki

doi:10.1557/opl.2015.248

Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering

Koichi Matsushima, Ryota Shimizu, Tomoaki Ide, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (V_oc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm². The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×10¹⁰ cm^-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high V_oc.

Original language	English
Pages (from-to)	53-57
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	1741
Issue number	January
DOIs	https://doi.org/10.1557/opl.2015.248
Publication status	Published - 2015
Event	2014 MRS Fall Meeting - Boston, United States Duration: Nov 30 2014 → Dec 5 2014

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2015.248

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@article{60e00df228314ac3b2d3cb46da4f6f6a,

title = "Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering",

abstract = "We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.",

author = "Koichi Matsushima and Ryota Shimizu and Tomoaki Ide and Daisuke Yamashita and Hyunwoong Seo and Kazunori Koga and Masaharu Shiratani and Naho Itagaki",

note = "Publisher Copyright: {\textcopyright} 2015 Materials Research Society.; 2014 MRS Fall Meeting ; Conference date: 30-11-2014 Through 05-12-2014",

year = "2015",

doi = "10.1557/opl.2015.248",

language = "English",

volume = "1741",

pages = "53--57",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

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TY - JOUR

T1 - Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering

AU - Matsushima, Koichi

AU - Shimizu, Ryota

AU - Ide, Tomoaki

AU - Yamashita, Daisuke

AU - Seo, Hyunwoong

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Itagaki, Naho

PY - 2015

Y1 - 2015

N2 - We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

AB - We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

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U2 - 10.1557/opl.2015.248

DO - 10.1557/opl.2015.248

M3 - Conference article

AN - SCOPUS:84938312571

VL - 1741

SP - 53

EP - 57

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

IS - January

T2 - 2014 MRS Fall Meeting

Y2 - 30 November 2014 through 5 December 2014

ER -

Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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