Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering

Koichi Matsushima, Ryota Shimizu, Tomoaki Ide, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

Original languageEnglish
Pages (from-to)53-57
Number of pages5
JournalMaterials Research Society Symposium Proceedings
Volume1741
Issue numberJanuary
DOIs
Publication statusPublished - Jan 1 2015
Event2014 MRS Fall Meeting - Boston, United States
Duration: Nov 30 2014Dec 5 2014

Fingerprint

Magnetron sputtering
Solar cells
magnetron sputtering
solar cells
Fabrication
fabrication
Epitaxial films
Energy gap
solar simulators
broadband
Crystal defects
Open circuit voltage
open circuit voltage
crystal defects
Leakage currents
X ray diffraction analysis
Power generation
high voltages
crystallinity
Grain boundaries

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering. / Matsushima, Koichi; Shimizu, Ryota; Ide, Tomoaki; Yamashita, Daisuke; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu; Itagaki, Naho.

In: Materials Research Society Symposium Proceedings, Vol. 1741, No. January, 01.01.2015, p. 53-57.

Research output: Contribution to journalConference article

Matsushima, Koichi ; Shimizu, Ryota ; Ide, Tomoaki ; Yamashita, Daisuke ; Seo, Hyunwoong ; Koga, Kazunori ; Shiratani, Masaharu ; Itagaki, Naho. / Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering. In: Materials Research Society Symposium Proceedings. 2015 ; Vol. 1741, No. January. pp. 53-57.
@article{60e00df228314ac3b2d3cb46da4f6f6a,
title = "Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering",
abstract = "We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.",
author = "Koichi Matsushima and Ryota Shimizu and Tomoaki Ide and Daisuke Yamashita and Hyunwoong Seo and Kazunori Koga and Masaharu Shiratani and Naho Itagaki",
year = "2015",
month = "1",
day = "1",
doi = "10.1557/opl.2015.248",
language = "English",
volume = "1741",
pages = "53--57",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",
number = "January",

}

TY - JOUR

T1 - Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering

AU - Matsushima, Koichi

AU - Shimizu, Ryota

AU - Ide, Tomoaki

AU - Yamashita, Daisuke

AU - Seo, Hyunwoong

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Itagaki, Naho

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

AB - We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

UR - http://www.scopus.com/inward/record.url?scp=84938312571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938312571&partnerID=8YFLogxK

U2 - 10.1557/opl.2015.248

DO - 10.1557/opl.2015.248

M3 - Conference article

AN - SCOPUS:84938312571

VL - 1741

SP - 53

EP - 57

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

IS - January

ER -