Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering

Koichi Matsushima; Ryota Shimizu; Tomoaki Ide; Daisuke Yamashita; Hyunwoong Seo; Kazunori Koga; Masaharu Shiratani; Naho Itagaki

doi:10.1557/opl.2015.248

Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering

Koichi Matsushima, Ryota Shimizu, Tomoaki Ide, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

Electronic Devices

Research output: Contribution to journal › Conference article

1 Citation (Scopus)

Abstract

We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (V_oc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm². The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×10¹⁰ cm^-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high V_oc.

Original language	English
Pages (from-to)	53-57
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	1741
Issue number	January
DOIs	https://doi.org/10.1557/opl.2015.248
Publication status	Published - Jan 1 2015
Event	2014 MRS Fall Meeting - Boston, United States Duration: Nov 30 2014 → Dec 5 2014

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Matsushima, K., Shimizu, R., Ide, T., Yamashita, D., Seo, H., Koga, K., Shiratani, M., & Itagaki, N. (2015). Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering. Materials Research Society Symposium Proceedings, 1741(January), 53-57. https://doi.org/10.1557/opl.2015.248

Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering. / Matsushima, Koichi; Shimizu, Ryota; Ide, Tomoaki; Yamashita, Daisuke; Seo, Hyunwoong; Koga, Kazunori ; Shiratani, Masaharu ; Itagaki, Naho.

In: Materials Research Society Symposium Proceedings, Vol. 1741, No. January, 01.01.2015, p. 53-57.

Research output: Contribution to journal › Conference article

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abstract = "We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.",

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AU - Matsushima, Koichi

AU - Shimizu, Ryota

AU - Ide, Tomoaki

AU - Yamashita, Daisuke

AU - Seo, Hyunwoong

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Itagaki, Naho

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N2 - We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

AB - We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

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