Abstract
We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.
| Original language | English |
|---|---|
| Pages (from-to) | 53-57 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 1741 |
| Issue number | January |
| DOIs | |
| Publication status | Published - Jan 1 2015 |
| Event | 2014 MRS Fall Meeting - Boston, United States Duration: Nov 30 2014 → Dec 5 2014 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering. / Matsushima, Koichi; Shimizu, Ryota; Ide, Tomoaki; Yamashita, Daisuke; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu; Itagaki, Naho.
In: Materials Research Society Symposium Proceedings, Vol. 1741, No. January, 01.01.2015, p. 53-57.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Fabrication of p-i-n solar cells utilizing ZnlnON by RF magnetron sputtering
AU - Matsushima, Koichi
AU - Shimizu, Ryota
AU - Ide, Tomoaki
AU - Yamashita, Daisuke
AU - Seo, Hyunwoong
AU - Koga, Kazunori
AU - Shiratani, Masaharu
AU - Itagaki, Naho
PY - 2015/1/1
Y1 - 2015/1/1
N2 - We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.
AB - We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnlnON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnlnON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnlnON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.
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U2 - 10.1557/opl.2015.248
DO - 10.1557/opl.2015.248
M3 - Conference article
VL - 1741
SP - 53
EP - 57
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
IS - January
ER -