The fabrication of PtGe/Ge contacts with low hole barrier height (ΦBP) and its electrical passivation were investigated. A PtGe/n-Ge contact passivated by an ultrathin SiO2/GeO2 bilayer showed a high electron barrier height of 0.64 eV, indicating ΦBP ∼ 0 eV and an on/off ratio of ∼ 106. A p-channel MOSFET (p-MOSFET) with an equivalent oxide thickness of 3.4nm was fabricated using PtGe contacts as the source/drain (S/D), which showed well-behaved transistor operation. By investigating device performance, we showed that the on/off ratio of drain current and the parasitic resistance of PtGe-S/D p-MOSFETs were much superior to those of HfGe-S/D p-MOSFETs.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)