Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs

Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    The fabrication of PtGe/Ge contacts with low hole barrier height (ΦBP) and its electrical passivation were investigated. A PtGe/n-Ge contact passivated by an ultrathin SiO2/GeO2 bilayer showed a high electron barrier height of 0.64 eV, indicating ΦBP ∼ 0 eV and an on/off ratio of ∼ 106. A p-channel MOSFET (p-MOSFET) with an equivalent oxide thickness of 3.4nm was fabricated using PtGe contacts as the source/drain (S/D), which showed well-behaved transistor operation. By investigating device performance, we showed that the on/off ratio of drain current and the parasitic resistance of PtGe-S/D p-MOSFETs were much superior to those of HfGe-S/D p-MOSFETs.

    Original languageEnglish
    Article number070306
    JournalJapanese journal of applied physics
    Volume54
    Issue number7
    DOIs
    Publication statusPublished - Jul 1 2015

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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