Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant

H. Hirayama, Y. Aoyagi, Tanaka Satoru

Research output: Contribution to journalArticle

Abstract

We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AIGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5xl010 cm2 down to 2xl09 cm2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Alo.ssGao.eaN capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume537
Publication statusPublished - Dec 1 1999
Externally publishedYes

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assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
quantum dots
Fabrication
fabrication
Organic Chemicals
Organic chemicals
Laser modes
Interfacial energy
surface energy
metalorganic chemical vapor deposition
Chemical vapor deposition
Photoluminescence
aluminum gallium nitride
atomic force microscopy
photoluminescence
Metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant. / Hirayama, H.; Aoyagi, Y.; Satoru, Tanaka.

In: Materials Research Society Symposium - Proceedings, Vol. 537, 01.12.1999.

Research output: Contribution to journalArticle

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