Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

H. Hirayama, Y. Aoyagi, Tanaka Satoru

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm-2 down to 2×109 cm -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga 0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5%.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4
Issue numberSUPPL. 1
Publication statusPublished - Dec 1 1999

Fingerprint

Surface-Active Agents
Semiconductor quantum dots
Surface active agents
Fabrication
Organic chemicals
Laser modes
Interfacial energy
Organic Chemicals
Chemical vapor deposition
Photoluminescence
aluminum gallium nitride
Metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant. / Hirayama, H.; Aoyagi, Y.; Satoru, Tanaka.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, No. SUPPL. 1, 01.12.1999.

Research output: Contribution to journalArticle

@article{15cf4af07916401b89588abb6f64ae66,
title = "Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant",
abstract = "We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm-2 down to 2×109 cm -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga 0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5{\%}.",
author = "H. Hirayama and Y. Aoyagi and Tanaka Satoru",
year = "1999",
month = "12",
day = "1",
language = "English",
volume = "4",
journal = "MRS Internet Journal of Nitride Semiconductor Research",
issn = "1092-5783",
publisher = "Materials Research Society",
number = "SUPPL. 1",

}

TY - JOUR

T1 - Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

AU - Hirayama, H.

AU - Aoyagi, Y.

AU - Satoru, Tanaka

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm-2 down to 2×109 cm -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga 0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5%.

AB - We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm-2 down to 2×109 cm -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga 0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5%.

UR - http://www.scopus.com/inward/record.url?scp=3442878496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3442878496&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3442878496

VL - 4

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

SN - 1092-5783

IS - SUPPL. 1

ER -