Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hideki Hirayama, Tanaka Satoru, Yoshinobu Aoyagi

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.

Original languageEnglish
Pages (from-to)251-253
Number of pages3
JournalMicroelectronic Engineering
Volume47
Issue number1
DOIs
Publication statusPublished - Jan 1 1999
Externally publishedYes
EventProceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA
Duration: Dec 7 1998Dec 11 1998

Fingerprint

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
quantum dots
Fabrication
fabrication
Photoluminescence
Organic Chemicals
photoluminescence
Organic chemicals
Energy balance
Interfacial energy
surface energy
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
aluminum gallium nitride
room temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant. / Hirayama, Hideki; Satoru, Tanaka; Aoyagi, Yoshinobu.

In: Microelectronic Engineering, Vol. 47, No. 1, 01.01.1999, p. 251-253.

Research output: Contribution to journalConference article

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abstract = "We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52{\%} and 1-5{\%}, respectively, from the PL spectrum.",
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AU - Satoru, Tanaka

AU - Aoyagi, Yoshinobu

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AB - We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.

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