Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hideki Hirayama; Satoru Tanaka; Yoshinobu Aoyagi

doi:10.1016/S0167-9317(99)00207-5

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hideki Hirayama, Satoru Tanaka, Yoshinobu Aoyagi

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.

Original language	English
Pages (from-to)	251-253
Number of pages	3
Journal	Microelectronic Engineering
Volume	47
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00207-5
Publication status	Published - Jun 1999
Externally published	Yes
Event	Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA Duration: Dec 7 1998 → Dec 11 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(99)00207-5

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title = "Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant",

abstract = "We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.",

author = "Hideki Hirayama and Satoru Tanaka and Yoshinobu Aoyagi",

year = "1999",

month = jun,

doi = "10.1016/S0167-9317(99)00207-5",

language = "English",

volume = "47",

pages = "251--253",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1",

note = "Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) ; Conference date: 07-12-1998 Through 11-12-1998",

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TY - JOUR

T1 - Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

AU - Hirayama, Hideki

AU - Tanaka, Satoru

AU - Aoyagi, Yoshinobu

PY - 1999/6

Y1 - 1999/6

N2 - We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.

AB - We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfaces vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-flow growth to 3-dimensional nano-scale island formation. The average lateral size and thickness of the InGaN and AlGaN QDs are 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was observed from InGaN QDs even in room temperature. In and Al incorporation in InGaN and AlGaN QDs were estimated to be 22-52% and 1-5%, respectively, from the PL spectrum.

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U2 - 10.1016/S0167-9317(99)00207-5

DO - 10.1016/S0167-9317(99)00207-5

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VL - 47

SP - 251

EP - 253

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98)

Y2 - 7 December 1998 through 11 December 1998

ER -

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Abstract

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