Fabrication of Si field emitters with gate using anodization

We have investigated the application of anodization process to fabrication of silicon field emitters. When anodization is carried out in the dark at low current density on single crystal silicon having n/p junctions, porous silicon is preferentially formed in p-type region, whereas n-type region is hardly affected. An emitter tip structure can be formed at the back side of unanodized n-type region, since anodization proceeds almost isotropically. The shape of emitter tip structure can be controlled by changing the dimension of the n/p junction area and varying the resistivity of p-type region. Fabrication of an emitter array and its field emission characteristic are reported. Results of fabrication of gated structures are also reported.