Abstract
We have investigated the application of anodization process to fabrication of silicon field emitters. When anodization is carried out in the dark at low current density on single crystal silicon having n/p junctions, porous silicon is preferentially formed in p-type region, whereas n-type region is hardly affected. An emitter tip structure can be formed at the back side of unanodized n-type region, since anodization proceeds almost isotropically. The shape of emitter tip structure can be controlled by changing the dimension of the n/p junction area and varying the resistivity of p-type region. Fabrication of an emitter array and its field emission characteristic are reported. Results of fabrication of gated structures are also reported.
| Original language | English |
|---|---|
| Pages | 78-82 |
| Number of pages | 5 |
| Publication status | Published - Dec 1 1997 |
| Event | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: Aug 17 1997 → Aug 21 1997 |
Other
| Other | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 |
|---|---|
| City | Kyongju, Korea |
| Period | 8/17/97 → 8/21/97 |
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All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces
Cite this
Fabrication of Si field emitters with gate using anodization. / Higa, Katsuya; Nishii, Kiyoaki; Asano, Tanemasa.
1997. 78-82 Paper presented at Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, .Research output: Contribution to conference › Paper
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TY - CONF
T1 - Fabrication of Si field emitters with gate using anodization
AU - Higa, Katsuya
AU - Nishii, Kiyoaki
AU - Asano, Tanemasa
PY - 1997/12/1
Y1 - 1997/12/1
N2 - We have investigated the application of anodization process to fabrication of silicon field emitters. When anodization is carried out in the dark at low current density on single crystal silicon having n/p junctions, porous silicon is preferentially formed in p-type region, whereas n-type region is hardly affected. An emitter tip structure can be formed at the back side of unanodized n-type region, since anodization proceeds almost isotropically. The shape of emitter tip structure can be controlled by changing the dimension of the n/p junction area and varying the resistivity of p-type region. Fabrication of an emitter array and its field emission characteristic are reported. Results of fabrication of gated structures are also reported.
AB - We have investigated the application of anodization process to fabrication of silicon field emitters. When anodization is carried out in the dark at low current density on single crystal silicon having n/p junctions, porous silicon is preferentially formed in p-type region, whereas n-type region is hardly affected. An emitter tip structure can be formed at the back side of unanodized n-type region, since anodization proceeds almost isotropically. The shape of emitter tip structure can be controlled by changing the dimension of the n/p junction area and varying the resistivity of p-type region. Fabrication of an emitter array and its field emission characteristic are reported. Results of fabrication of gated structures are also reported.
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M3 - Paper
AN - SCOPUS:0031355151
SP - 78
EP - 82
ER -