Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency

Kohsuke Yoshinaga, Hiroshi Naragino, Akira Nakahara, Kensuke Honda

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

Nitrogen doped amorphous silicon carbide (N-doped a-SiC) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition (RF-PeCVD) method using mixed solution of tetramethylsilane (TES) and 1,1,1,3,3,3-hexamethyldisilazane (HMDS) as a liquid source. Chemical composition of N-doped a-SiC thin film was Si:C 1:4 and sp2-bonded carbon ratio was 0.75. N-doped DLC were multi-phase structure including a-SiC phase, sp 2 clusters and a-Si clusters. Optical gap and resistivity of the film were 1.68 eV and 4.32×104 Ω cm, respectively. From photocurrent measurement under UV exposure, it was clarified that the film functioned as n-type semiconductor materials with 4.87 % of quantum yield, which was on the same level as that obtained at anatase-type titanium oxide prepared by sol-gel method. To apply these films to solar cells, further improvements of optical gap and conductivity are necessary.

Original languageEnglish
Article number012040
JournalJournal of Physics: Conference Series
Volume441
Issue number1
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event11th Asia Pacific Conference on Plasma Science and Technology, APCPST 2012 and 25th Symposium on Plasma Science for Materials, SPSM 2012 - Kyoto, Japan
Duration: Oct 2 2012Oct 5 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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