Fabrication of single-crystal Si microstructures by anodization

Katsuya Higa; Tanemasa Asano

Fabrication of single-crystal Si microstructures by anodization

Research output: Chapter in Book/Report/Conference proceeding › Other chapter contribution

Abstract

We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.

Original language	English
Title of host publication	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
Editors	Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
Pages	6347-6695
Number of pages	349
Volume	35
Edition	12 B
Publication status	Published - Dec 1996
Externally published	Yes
Event	Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn Duration: Jul 8 1996 → Jul 11 1996

Other

Other	Proceedings of the 1996 9th International MicroProcess Conference, MPC'96
City	Kyushu, Jpn
Period	7/8/96 → 7/11/96

All Science Journal Classification (ASJC) codes

Engineering(all)

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Fabrication of single-crystal Si microstructures by anodization. / Higa, Katsuya; Asano, Tanemasa.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. ed. / Y. Aoyagi; N. Atoda; T. Fukui; M. Komuro; M. Kotera; al et al. Vol. 35 12 B. ed. 1996. p. 6347-6695.

Research output: Chapter in Book/Report/Conference proceeding › Other chapter contribution

Higa, K & Asano, T 1996, Fabrication of single-crystal Si microstructures by anodization. in Y Aoyagi, N Atoda, T Fukui, M Komuro, M Kotera & A et al (eds), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 12 B edn, vol. 35, pp. 6347-6695, Proceedings of the 1996 9th International MicroProcess Conference, MPC'96, Kyushu, Jpn, 7/8/96.

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abstract = "We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.",

author = "Katsuya Higa and Tanemasa Asano",

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pages = "6347--6695",

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booktitle = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers",

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AU - Higa, Katsuya

AU - Asano, Tanemasa

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N2 - We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.

AB - We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.

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BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

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T2 - Proceedings of the 1996 9th International MicroProcess Conference, MPC'96

Y2 - 8 July 1996 through 11 July 1996

ER -

Fabrication of single-crystal Si microstructures by anodization

Abstract

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All Science Journal Classification (ASJC) codes

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