Fabrication of single-crystal Si microstructures by anodization

Katsuya Higa, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

2 Citations (Scopus)

Abstract

We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
EditorsY. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
Pages6347-6695
Number of pages349
Volume35
Edition12 B
Publication statusPublished - Dec 1996
Externally publishedYes
EventProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
Duration: Jul 8 1996Jul 11 1996

Other

OtherProceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn
Period7/8/967/11/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Higa, K., & Asano, T. (1996). Fabrication of single-crystal Si microstructures by anodization. In Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, & A. et al (Eds.), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (12 B ed., Vol. 35, pp. 6347-6695)