Abstract
We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.
| Original language | English |
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| Title of host publication | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers |
| Editors | Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al |
| Pages | 6347-6695 |
| Number of pages | 349 |
| Volume | 35 |
| Edition | 12 B |
| Publication status | Published - Dec 1996 |
| Event | Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn Duration: Jul 8 1996 → Jul 11 1996 |
Other
| Other | Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 |
|---|---|
| City | Kyushu, Jpn |
| Period | 7/8/96 → 7/11/96 |
All Science Journal Classification (ASJC) codes
- Engineering(all)