Fabrication of single-crystal Si microstructures by anodization

Katsuya Higa, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

2 Citations (Scopus)


We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
EditorsY. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
Number of pages349
Edition12 B
Publication statusPublished - Dec 1996
EventProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
Duration: Jul 8 1996Jul 11 1996


OtherProceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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