Fabrication of single-crystal Si microstructures by anodization

Katsuya Higa, Tanemasa Asano

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.

Original languageEnglish
Pages (from-to)6648-6651
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number12 SUPPL. B
Publication statusPublished - Dec 1 1996

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Single crystals
Fabrication
microstructure
Microstructure
fabrication
single crystals
Pressure sensors
pressure sensors
Gages
electrical resistivity
profiles

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fabrication of single-crystal Si microstructures by anodization. / Higa, Katsuya; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 12 SUPPL. B, 01.12.1996, p. 6648-6651.

Research output: Contribution to journalArticle

@article{6c23f9ef5eb44eeea212eea028a2d695,
title = "Fabrication of single-crystal Si microstructures by anodization",
abstract = "We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.",
author = "Katsuya Higa and Tanemasa Asano",
year = "1996",
month = "12",
day = "1",
language = "English",
volume = "35",
pages = "6648--6651",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "12 SUPPL. B",

}

TY - JOUR

T1 - Fabrication of single-crystal Si microstructures by anodization

AU - Higa, Katsuya

AU - Asano, Tanemasa

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.

AB - We have investigated the application of the anodization process to the fabrication of microstructures consisting of single-crystal Si. When anodization is carried out in the dark, porous Si is preferentially formed in a p-type region. The porous region can be used as a sacrificial region. The unanodized Si region forms the components of the microstructures. The shape of the porous region can be controlled by varying the profiles of the n- and p-type regions and their resistivity. It has been found that, by utilizing these characteristics, various microstructures can be formed from single-crystal Si. Fabrication of a cantilever and a piezoresistive gauge for a pressure sensor are demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0000770704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000770704&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000770704

VL - 35

SP - 6648

EP - 6651

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12 SUPPL. B

ER -