Fabrication of single-crystal silicon field emitter array on glass substrate

Katsuya Higa, Tanemasa Asano

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The fabrication process of a single-crystal silicon field emitter array on a glass substrate has been investigated. Single-crystal silicon emitter tips are prepared by anodization of a silicon wafer having an n/p junction. Emitter tips are transferred to the glass substrate by anodic bonding. The anodic bonding is carried out at temperatures lower than 300°C. The conditions of the fabrication process and the field emission characteristics are reported. It is shown that the temperature of the emitter tips rises to the melting point of silicon by Joule heating. This phenomenon is shown to be peculiar to the emitter tips on a glass substrate which has a low thermal conductivity. The influence of Joule heating at the emitter tip, during electron emission, on the emission characteristics is also reported.

Original languageEnglish
Pages (from-to)4307-4310
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume41
Issue number6 B
Publication statusPublished - Jun 2002
Externally publishedYes

Fingerprint

emitters
Joule heating
Single crystals
Fabrication
Glass
Silicon
fabrication
glass
single crystals
silicon
Substrates
Electron emission
Silicon wafers
Field emission
Melting point
Thermal conductivity
Temperature
p-n junctions
electron emission
melting points

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication of single-crystal silicon field emitter array on glass substrate. / Higa, Katsuya; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 41, No. 6 B, 06.2002, p. 4307-4310.

Research output: Contribution to journalArticle

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