Fabrication of single crystal silicon field emitter array on glass substrate

K. Higa, T. Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Summary form only given. We have demonstrated the fabrication and field emission characteristics of field emitter arrays using direct bonding between single-crystal silicon-emitter tips prepared by anodization and another silicon substrate. For application to display devices, it is necessary to fabricate tip arrays on transparent substrates. In this report, we demonstrate the fabrication of the silicon field emitter array on a glass substrate using anodization and anodic bonding. The anodic bonding is carried out at temperatures less than 300°C. The anodic bonding process conditions and the field emission characteristics of field emitter are reported.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages260-261
Number of pages2
ISBN (Electronic)4891140178, 9784891140175
DOIs
Publication statusPublished - Jan 1 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: Oct 31 2001Nov 2 2001

Publication series

Name2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001
CountryJapan
CityShimane
Period10/31/0111/2/01

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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