Fabrication of single crystal silicon field emitter array on glass substrate

K. Higa, T. Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Summary form only given. We have demonstrated the fabrication and field emission characteristics of field emitter arrays using direct bonding between single-crystal silicon-emitter tips prepared by anodization and another silicon substrate. For application to display devices, it is necessary to fabricate tip arrays on transparent substrates. In this report, we demonstrate the fabrication of the silicon field emitter array on a glass substrate using anodization and anodic bonding. The anodic bonding is carried out at temperatures less than 300°C. The anodic bonding process conditions and the field emission characteristics of field emitter are reported.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages260-261
Number of pages2
ISBN (Electronic)4891140178, 9784891140175
DOIs
Publication statusPublished - Jan 1 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: Oct 31 2001Nov 2 2001

Publication series

Name2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001
CountryJapan
CityShimane
Period10/31/0111/2/01

Fingerprint

Silicon
Glass
emitters
Single crystals
Fabrication
fabrication
glass
single crystals
silicon
Substrates
Field emission
field emission
display devices
Equipment and Supplies
Temperature
Display devices
temperature

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Higa, K., & Asano, T. (2001). Fabrication of single crystal silicon field emitter array on glass substrate. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 260-261). [984188] (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984188

Fabrication of single crystal silicon field emitter array on glass substrate. / Higa, K.; Asano, T.

2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 260-261 984188 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Higa, K & Asano, T 2001, Fabrication of single crystal silicon field emitter array on glass substrate. in 2001 International Microprocesses and Nanotechnology Conference, MNC 2001., 984188, 2001 International Microprocesses and Nanotechnology Conference, MNC 2001, Institute of Electrical and Electronics Engineers Inc., pp. 260-261, International Microprocesses and Nanotechnology Conference, MNC 2001, Shimane, Japan, 10/31/01. https://doi.org/10.1109/IMNC.2001.984188
Higa K, Asano T. Fabrication of single crystal silicon field emitter array on glass substrate. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 260-261. 984188. (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). https://doi.org/10.1109/IMNC.2001.984188
Higa, K. ; Asano, T. / Fabrication of single crystal silicon field emitter array on glass substrate. 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 260-261 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001).
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